Small Signal Field-Effect Transistor, 0.6A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Zetex Semiconductors |
| Objectid | 1407999367 |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| compound_id | 10925674 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 0.6 A |
| Maximum drain current (ID) | 0.6 A |
| Maximum drain-source on-resistance | 8 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-39 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | 235 |
| Polarity/channel type | P-CHANNEL |
| Maximum power consumption environment | 5 W |
| Maximum power dissipation(Abs) | 5 W |
| Certification status | Not Qualified |
| Guideline | CECC |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| ZVP2110B | BS250P | ZVP0540B | ZVP2120A | ZVP1320B | ZVP2120B | ZVP3306B | ZVP0545B | |
|---|---|---|---|---|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 0.6A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | Small Signal Field-Effect Transistor, 0.23A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3 | Small Signal Field-Effect Transistor, 0.1A I(D), 400V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | Small Signal Field-Effect Transistor, 0.1A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | Small Signal Field-Effect Transistor, 0.3A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | Small Signal Field-Effect Transistor, 0.1A I(D), 450V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 |
| Is it Rohs certified? | incompatible | conform to | incompatible | conform to | incompatible | conform to | incompatible | incompatible |
| package instruction | CYLINDRICAL, O-MBCY-W3 | IN-LINE, R-PSIP-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown | not_compliant | unknown | not_compliant | unknown | compliant | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 100 V | 45 V | 400 V | 200 V | 200 V | 200 V | 60 V | 450 V |
| Maximum drain current (Abs) (ID) | 0.6 A | 0.23 A | 0.1 A | 0.12 A | 0.1 A | 0.3 A | 0.4 A | 0.1 A |
| Maximum drain current (ID) | 0.6 A | 0.23 A | 0.1 A | 0.12 A | 0.1 A | 0.3 A | 0.4 A | 0.1 A |
| Maximum drain-source on-resistance | 8 Ω | 14 Ω | 150 Ω | 25 Ω | 80 Ω | 28 Ω | 14 Ω | 150 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | O-MBCY-W3 | R-PSIP-W3 | O-MBCY-W3 | O-PBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609 code | e0 | e3 | e0 | e3 | e0 | e3 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 200 °C | 150 °C | 200 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | METAL | PLASTIC/EPOXY | METAL | PLASTIC/EPOXY | METAL | METAL | METAL | METAL |
| Package shape | ROUND | RECTANGULAR | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | IN-LINE | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | 235 | 260 | 235 | 260 | 235 | 260 | 235 | 235 |
| Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| Maximum power dissipation(Abs) | 5 W | 0.7 W | 5 W | 0.7 W | 5 W | 5 W | 5 W | 5 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | SINGLE | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | 40 | 10 | 40 | NOT SPECIFIED | 40 | NOT SPECIFIED | 10 |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maker | Zetex Semiconductors | - | - | - | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors |
| JEDEC-95 code | TO-39 | - | TO-39 | - | TO-39 | TO-39 | TO-39 | TO-39 |
| Maximum power consumption environment | 5 W | - | 5 W | - | 5 W | 5 W | 5 W | 5 W |
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