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FDZ5045N

Description
Power Field-Effect Transistor, 22A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, BGA-42
CategoryDiscrete semiconductor    The transistor   
File Size161KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

FDZ5045N Overview

Power Field-Effect Transistor, 22A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, BGA-42

FDZ5045N Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeBGA
package instructionGRID ARRAY, R-PBGA-B42
Contacts42
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)22 A
Maximum drain-source on-resistance0.005 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PBGA-B42
Number of components1
Number of terminals42
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formGRID ARRAY
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formBALL
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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