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PDMB200BS12

Description
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
CategoryDiscrete semiconductor    The transistor   
File Size339KB,4 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric Compare View All

PDMB200BS12 Overview

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

PDMB200BS12 Parametric

Parameter NameAttribute value
MakerNihon Inter Electronics Corporation
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts7
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)200 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)800 ns
Nominal on time (ton)400 ns
Base Number Matches1
QS043-402-20371(2/5)
IGBT
M½½½½½-D½½½
□ 回 路 図 :
CIRCUIT
PDMB200BS12
200 A,1200V
PDMB200BS12C
□ 外 ½ 寸 法 図 :
OUTLINE DRAWING
108
93
± 0 .2 5
14 11 14 11 14
3-M6
7(G2)
6(E2)
4-Ø 6.5
12.0 11.0 12.0 11.0 12.0
94.0
80
±0.25
62
11 13
20
6
15 6
48
± 0 .2 5
(C2E1)
1
(E2)
2
(C1)
3
2-Ø6.5
4
4-fasten tab
#110 t=0.5
21.2 7.5
7
1
2
3
7
1
48.0
16.0
14.0
2
3
7
6
5(E1)
4(G1)
5
4
5
4
6
3-M5
23.0
23.0
17.0
25
16
9
16
25
9
16
24
14
9
14
9
14
+1.0
- 0.5
8
30
PDMB200BS12
□ 最 大 定 格 :
MAXIMUM
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
コ レ ク タ 電 流
Collector Current
コ レ ク タ 損 失
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
圧(Terminal to Base AC,1½inute)
Isolation Voltage
Module Base to Heatsink
締 め 付 け ト ル ク
Mounting Torque
Busbar to Main Terminal
□ 電 気 的 特 性
DC
1½½
7
23
LABEL
30
+1.0
- 0 .5
LABEL
PDMB200BS12C
Dimension:[mm½
RATINGS
(T
=25℃)
S½½½½½
CES
GES
CP
½
½½½
ISO
½½½
R½½½½
V½½½½
U½½½
(RMS)
3 3 .6
( 0 )
( 0 )
2 2 .4
N・½
(kgf½cm)
I½½½
1,200
±20
200
400
1,200
-40½+150
-40½+125
2,500
PDMB200BS12
3 3 .6
( 0 )
3 3 .6
( 0 )
PDMB200BS12C
ELECTRICAL CHARACTERISTICS
(T
=25℃)
S½½½½½
CES
GES
CE(½½½)
GE(½½)
½½½
上 昇 時 間
ターンオン時間
下 降 時 間
ターンオフ時間
Rise
Turn-on
Fall
Turn-off
Time
Time
Time
Time
½
½
½
½½
½
½
½
½½½
T½½½ C½½½½½½½½
CE
= 1200V,V
GE
= 0V
GE
= ±20V,V
CE
= 0V
= 200A,V
GE
= 15V
CE
= 5V,I
= 200mA
CE
= 10V,V
GE
= 0V,½= 1MH
CC
= 600V
L
= 3.0Ω
G
= 7.5Ω
GE
= ±15V
M½½.
4.0
T½½.
2.3
12,600
0.25
0.40
0.25
0.80
M½½.
2.0
1.0
2.7
8.0
0.45
0.70
0.35
1.10
U½½½
½A
μA
½F
C½½½½½½½½½½½½½
コ レ ク タ 遮 断 電 流
Collector-Emitter Cut-Off Current
ゲ ー ト 漏 れ 電 流
Gate-Emitter Leakage Current
コレクタ・エミッタ間½和電圧
Collector-Emitter Saturation Voltage
ゲ ー ト し き い 値 電 圧
Gate-Emitter Threshold Voltage
Input Capacitance
スイッチング時間
Switching Time
4 18.0
μ½
□フリーホイーリングダイオードの 特 性:
FREE
I½½½
Forward Current
C½½½½½½½½½½½½½
Peak Forward Voltage
逆 回 復 時 間
Reverse Recovery Time
WHEELING DIODE RATINGS & CHARACTERISTICS
(T
=25℃)
S½½½½½
FM
S½½½½½
½
½½
R½½½½ V½½½½
200
400
T½½½ C½½½½½½½½
= 200A,V
GE
= 0V
= 200A,V
GE
= -10V
½i/½t= 400A/μs
M½½.
T½½.
2.2
0.2
M½½.
2.6
0.3
U½½½
DC
1½½
U½½½
μ½
□ 熱 的 特 性 :
THERMAL CHARACTERISTICS
C½½½½½½½½½½½½½
IGBT
Thermal Impedance
Diode
S½½½½½
Rth(j-c)
T½½½ C½½½½½½½½
Junction to Case
(Tc測定点チップ直下)
M½½.
T½½.
M½½. U½½½
0.104
℃/W
0.214
日本インター株式会社

PDMB200BS12 Related Products

PDMB200BS12 PDMB200BS12C
Description Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Maker Nihon Inter Electronics Corporation Nihon Inter Electronics Corporation
Parts packaging code MODULE MODULE
package instruction FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-XUFM-X7
Contacts 7 7
Reach Compliance Code unknown unknown
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 200 A 200 A
Collector-emitter maximum voltage 1200 V 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code R-XUFM-X7 R-XUFM-X7
Number of components 2 2
Number of terminals 7 7
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Transistor component materials SILICON SILICON
Nominal off time (toff) 800 ns 800 ns
Nominal on time (ton) 400 ns 400 ns
Base Number Matches 1 1
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