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BDT64C

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size116KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

BDT64C Overview

Transistor

BDT64C Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector
Current -I
C
= -
12A
·High
DC Current Gain-h
FE
= 1000(Min)@ I
C
= -5A
·Complement
to Type BDT65/A/B/C
APPLICATIONS
·Designed
for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDT64
Collector-Emitter
Voltage
BDT64A
BDT64B
BDT64C
BDT64
Collector-Emitter
Voltage
BDT64A
BDT64B
BDT64C
V
EBO
I
C
I
CM
I
B
B
BDT64/A/B/C
VALUE
-60
-80
UNIT
V
CER
V
-100
-120
-60
-80
V
-100
-120
-5
-12
-20
-0.5
125
150
-65~150
V
A
A
A
W
V
CEO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1
UNIT
℃/W
isc Website:www.iscsemi.cn

BDT64C Related Products

BDT64C BDT64A BDT64 BDT64B
Description Transistor Transistor Transistor Transistor
Maker Inchange Semiconductor Inchange Semiconductor Inchange Semiconductor Inchange Semiconductor
Reach Compliance Code unknown unknown unknown unknown
Base Number Matches 1 1 1 1
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