INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector
Current -I
C
= -
12A
·High
DC Current Gain-h
FE
= 1000(Min)@ I
C
= -5A
·Complement
to Type BDT65/A/B/C
APPLICATIONS
·Designed
for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDT64
Collector-Emitter
Voltage
BDT64A
BDT64B
BDT64C
BDT64
Collector-Emitter
Voltage
BDT64A
BDT64B
BDT64C
V
EBO
I
C
I
CM
I
B
B
BDT64/A/B/C
VALUE
-60
-80
UNIT
V
CER
V
-100
-120
-60
-80
V
-100
-120
-5
-12
-20
-0.5
125
150
-65~150
V
A
A
A
W
℃
℃
V
CEO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDT64
BDT64A
I
C
= -30mA ;I
B
=0
B
BDT64/A/B/C
CONDITIONS
MIN
-60
-80
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
V
-100
-120
BDT64B
BDT64C
V
CE(sat)-1
V
CE(sat)-2
V
BE(
on
)
V
ECF-1
V
ECF-2
I
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
C-E Diode Forward Voltage
C-E Diode Forward Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
Output Capacitance
I
C
= -5A; I
B
= -20mA
B
-2.0
-3.0
-2.5
-2.0
-2.0
-0.2
-0.4
-2.0
-5
1500
1000
750
200
V
V
V
V
V
mA
mA
mA
I
C
= -10A; I
B
= -100mA
I
C
= -5A ; V
CE
= -4V
I
F
= -5A
I
F
= -12A
V
CE
=
1
/
2
V
CEOmax
; I
B
= 0
V
CB
= V
CBOmax
;I
E
= 0
V
CB
=
1
/
2
V
CBOmax
;I
E
= 0;T
C
= 150℃
V
EB
= -5V; I
C
=0
I
C
= -1A ; V
CE
= -4V
I
C
= -5A ; V
CE
= -4V
I
C
= -12A ; V
CE
= -4V
I
E
= 0 ; V
CB
= -10V; f
test
=1MHz
pF
Switching times
t
on
t
off
Turn-On Time
Turn-Off Time
0.5
2.5
2
5
μs
μs
I
C
= -5A; I
B1
= -I
B2
= -20mA;
V
CC
= -30V
isc Website：www.iscsemi.cn
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