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DF3A3.3FV,L3F

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size136KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

DF3A3.3FV,L3F Overview

Zener Diode

DF3A3.3FV,L3F Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Reach Compliance Codeunknown
Factory Lead Time12 weeks
Diode typeZENER DIODE
Base Number Matches1
DF3A3.3FV
TOSHIBA Diodes for Protecting against ESD
DF3A3.3FV
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
0.22±0.05
1.2±0.05
0.8±0.05
0.32±0.05
3
0.13±0.05
Unit: mm
1.2±0.05
0.8±0.05
0.4
0.4
0.5±0.05
*
This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
The mounting of two devices on an ultra-compact package reduces the
number of parts and lowers assembly cost.
1
2
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P*
T
j
T
stg
Rating
150
150
−55
to 150
Unit
mW
°C
°C
VESM
1. CATHODE1
2. CATHODE2
3. ANODE
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
reliability significantly even if the operating conditions (i.e.
TOSHIBA
1-1Q1B
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Weight: 0.0015 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*:
Mounted on FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
0.5mm
0.45mm
0.45mm
0.4mm
Electrical Characteristics
(Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
V
R
=
1.5 V
V
R
= 0, f = 1MHz
Test Condition
Min
3.1
Typ.
3.3
115
Max
3.5
130
100
Unit
V
Ω
μA
pF
Start of commercial production
2003-06
1
2014-03-01

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