Generates either odd or even parity for nine data lines
Cascadable for n-bits parity
1.2μ
CMOS
- Latchup immune
High speed
Low power consumption
Single 5 volt supply
Available QML Q or V processes
Flexible package
- 14-pin DIP
- 14-lead flatpack
UT54ACS280 - SMD 5962-96582
UT54ACTS280 - SMD 5962-96583
DESCRIPTION
The UT54ACS280 and the UT54ACTS280 are 9-bit parity gen-
erators/checkers that use high-performance circuitry and fea-
tures odd and even outputs to facilitate operation of either odd
or even parity application. The word-length capability is easily
expanded by cascading.
The devices are characterized over full military temperature
range of -55°C to +125°C.
FUNCTION TABLE
NUMBER OF INPUTS A THRU I
THAT ARE HIGH
OUTPUT
Σ
EVEN
0,2,4,6,8
1,3,5,7,9
H
L
Σ
ODD
L
H
PINOUTS
14-Pin DIP
Top View
G
H
NC
I
∑
EVEN
∑
ODD
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
F
E
D
C
B
A
14-Lead Flatpack
Top View
G
H
NC
I
∑
EVEN
∑
ODD
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
F
E
D
C
B
A
LOGIC SYMBOL
(8)
(9)
(10)
(11)
(12)
(13)
(1)
(2)
(4)
(6)
∑
ODD
(5)
∑
EVEN
2k
A
B
C
D
E
F
G
H
I
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and IEC
Publication 617-12.
1
LOGIC DIAGRAM
A (8)
(
B (9)
C (10)
(5)
Σ
EVEN
D
(11)
E
(12)
F
(13)
(6)
Σ
ODD
(1)
G
(2)
H
(4)
I
2
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Input voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
3
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V
±
10%; V
SS
= 0V
6
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Short-circuit output current
2 ,4
ACTS/ACS
Output current
10
(Sink)
I
OH
Output current
10
(Source)
P
total
I
DDQ
ΔI
DDQ
Power dissipation
2, 8, 9
Quiescent Supply Current
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 8.0mA
I
OL
= 100μA
I
OH
= -8.0mA
I
OH
= -100μA
V
O
= V
DD
and V
SS
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
C
L
= 50pF
V
DD
= 5.5V
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
ƒ
= 1MHz @ 0V
ƒ
= 1MHz @ 0V
15
15
pF
pF
2.2
10
1.6
mW/
MHz
μA
mA
-8
mA
.7V
DD
V
DD
- 0.25
-200
8
200
.5V
DD
.7V
DD
-1
1
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
μA
0.40
0.25
V
V
OH
V
I
OS
I
OL
mA
mA
4
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤
5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
As the title says: I have been working on reading SMS messages on a CDMA modem wavecom for two days. The problem of sending Chinese and English SMS messages has been basically solved, but it is still ...
1. There is an infinite loop in the interrupt or main function, and the program stops somewhere. 2. Stack overflow. The program runs away. Solution: A. Check if the interrupt uses _EINT() to cause int...
[To understand the issue of upgrading security qualification certificates, we must first understand the level of security qualification certificates. In most areas of China, enterprises with a registe...
1. Several nouns
ABI:
The specifications that an executable file must follow in order to run in a specific execution environment;
Separately generated relocatabl...[Details]
A parallel inverter consists of two thyristors (T1 and T2), a capacitor, a center-tapped transformer, and an inductor. The thyristors provide a current path, while the inductor L maintains a consta...[Details]
In recent years, many people have switched to new energy vehicles, and this type of vehicle has indeed been highly sought after and is considered the future direction of automobile development, and...[Details]
Whether it is an electric car or an ordinary fuel car, for the vast majority of car buyers, the final cost of use is what they care about most. For fuel cars, how to save fuel is what drivers care ...[Details]
Definition of interactive projection system:
Interactive projection systems, also known as multimedia interactive projection, are available in floor, wall, and tabletop interactive projection....[Details]
Common Mode Semiconductor has officially released its latest generation of power management ICs—the GM6506 series. This fully integrated high-frequency synchronous rectification step-down p...[Details]
With the rapid development of electric vehicles in my country, people are beginning to pay attention to the issue of radiation from electric vehicles. We all know that mobile phones emit radiation,...[Details]
Electric vehicles are powered by electricity, and charging is a device that supplements the vehicle's energy source. It is common to need to recharge the vehicle when driving. But can you charge th...[Details]
Recently, Joyson Electronics has made positive progress in the core technology research and development of the robot's "brain and brain" and key components, and launched the industry's first integr...[Details]
To improve the lateral active safety of intelligent connected vehicles, the identification and definition of unexpected functional safety scenarios for the EPS (Electronic Steering System) ...[Details]
introduction
In today's busy society, people experience chronic high stress, which in turn poses a significant threat to our health. Therefore, effectively relieving stress has become a pr...[Details]
1. Introduction
In 2015, Apple's new MacBook and Apple Watch both featured force-sensing technology, which Apple calls Force Touch. Each time a user presses the touchpad, the device not only p...[Details]
On August 20, Huawei Device announced that the all-new M7 is the first to feature an in-cabin laser vision solution. This solution offers enhanced active safety capabilities compared to primary vis...[Details]
The power transmission system between a car's engine and drive wheels is called its drivetrain. It ensures the necessary traction and speed under various driving conditions, and coordinates these t...[Details]
In recent years, with the development of MOSFETs, they have gradually replaced transistors in the low-power, fast-switching industry. Major manufacturers in this field have also been reducing their...[Details]
Embedded System
京公网安备 11010802033920号
EEWORLD
