V
CE
I
C
=
=
1200 V
75 A
IGBT Module LoPak3 SPT
5SNS 0075W121100
MARKETING INFORMATION
Doc. No. 5SYA1521-00 Aug. 00
Low-loss, rugged IGBT SPT
chip-set
EMC friendly diode with positive
temp. coefficient of on-state
Low profile compact package
Industry standard package
• •
•
•
Maximum Rated Values
Parameter
Collector-Emitter Voltage
DC Collector Current
Peak Collector Current
Gate Emitter Voltage
Total Power Dissipation
IGBT Switching SOA
IGBT Short Circuit SOA
DC Forward Current
Peak Forward Current
Symbol
V
CES
I
C
I
CM
V
GES
Ptot
SwSOA
SCSOA
I
F
I
FM
(T
vj
= 25°C, unless specified otherwise)
Conditions
V
GE
shorted
T
hs
= 70°C
Pulse: tp=1ms, T
hs
= 70°C
T
hs
= 25°C per switch
I
C
= 150 A, V
CEM
= 1200 V, V
CC
≤
1000 V,
V
GE
=
±15
V, T
vj
=125°C.
voltage measured on auxiliary terminals
V
CC
= 900 V, V
CEM
= 1200 V, t
p
= 10 µs,
V
GE
=
±15
V, T
vj
=125 °C
75
Pulse: tp = 1ms, T
hs
= 70°C
150
A
A
Values
1200
75
150
±20
340
Unit
V
A
A
V
W
ABB Semiconductors AG reserves the right to change specifications without notice.
5SNS 0075W121100
Maximum Rated Values
(cont.)
Parameter
Junction Temperature
Storage Temperature
Isolation Voltage
Symbol
T
vj
T
tstg
/T
cop
V
iso
(T
vj
= 25°C, unless specified otherwise)
Conditions
Values
- 40 ~ 150
- 40 ~ 125
Unit
°C
°C
V
Nm
1 min, f = 50Hz
(M5) Hole 5.5mm diameter
Pin: 1.15*1.0 mm
Pitch of pins : 3.81 mm
2500
3~6
Base to Heatsink
Mounting
Main Terminals
PCB mounting
Gate, Emitter Aux. Pin: 1.15*1.0 mm
IGBT Characteristic Values
Parameter
Collector-Emitter
Saturation Voltage
Collector Cut-off Current
Gate-Emitter leakage
Current
Gate-Emitter Threshold
Voltage
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Module stray Inductance
Plus to Minus
Symbol
(T
vj
= 25°C, unless specified otherwise)
Conditions
T
vj
= 25 °C
T
vj
= 125 °C
min. typ.
1.90
2.10
6
±500
4.5
1150
6
6.5
max. Unit
2.30
V
V
mA
nA
V
nC
nF
nF
nF
µs
µs
µs
µs
mJ
mJ
25
1.25
nH
mΩ
V
CE(sat)
* I
C
= 75 A, V
GE
= 15 V
I
CES
I
GES
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 125 °C
V
CE
= 0 V, V
GE
=
±20
V, T
vj
= 125 °C
V
GE(TO)
I
C
= 3 mA, V
CE
= V
GE
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
L
s DC
I
C
= 75 A, V
CC
= 600 V, R
gon
= 15
Ω,
T
vj
= 125 °C, V
GE
=
±15
V
I
C
= 75 A, V
CC
= 600 V, R
goff
= 15
Ω,
T
vj
= 125 °C,V
GE
=
±15
V
R
gon
= 15
Ω
I
C
= 75 A, T
vj
= 125 °C,
V
CC
= 600 V, V
GE
=
±15
V,
inductive load, integrated up
R
goff
= 15
Ω
to: 3% V
CE
(E
on
), 1% I
C
(E
off
)
V
CE
= 25 V, V
GE
= 0 V, f = 1MHz
I
C
= 75 A, V
CE
= 600 V, V
GE
= -15 to 15 V
0.5
0.35
0.2
0.08
0.70
0.06
8.3
7.5
Resistance terminal-chip
R
CC’+EE’
Ths = 25°C
* Note 1: Collector emitter saturation voltage is given at die level.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1521-00 Aug. 00
2 of 4
5SNS 0075W121100
Diode Characteristic Values
Parameter
Forward Voltage
Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Symbol
V
F
*
I
rrm
Q
rr
t
rr
(T
vj
= 25°C, unless specified otherwise)
Conditions
I
F
= 75 A
T
vj
= 25 °C
T
vj
= 125 °C
min.
typ.
2.00
2.00
112
15
0.35
6.8
1.25
max.
2.40
Unit
V
A
µC
µs
mJ
mΩ
I
F
= 75 A, R
gon
= 15
Ω,
V
CC
= 600 V,
V
GE
=
±15
V, T
vj
= 125 °C
I
F
= 75 A, T
vj
= 125 °C, V
CC
= 600 V,
Reverse Recovery Energy
E
rec
R
gon
= 15
Ω,
V
GE
=
±15
V,
inductive load, fully integrated
Resistance terminal-chip
R
CC’+EE’
Ths = 25°C
* Note 2: Forward voltage is given at die level
Thermal Characteristics
Parameter
IGBT Thermal Resistance
Junction to Case
Diode Thermal Resistance
Junction to Case
Equivalent IGBT Thermal
Resistance Junct. to Heat.
Equivalent Diode Thermal
Resistance Junct. to Heat.
Symbol
R
th
j-c
Igbt
R
th
j-c
Diode
R
th
j-h
Igbt
R
th
j-h
Diode
(T
j
= 25°C, unless specified otherwise)
Conditions
Heatsink:
flatness < +/- 100 µm, without ridge
roughness < 6 µm
Thermal grease:
thickness < 100 µm
min.
typ.
max.
Unit
0.235 °C/W
0.550 °C/W
0.370 °C/W
0.740 °C/W
Mechanical Properties
Parameter
Dimensions
Clearance Distance
Surface Creepage
Distance
Weight
Symbol
Conditions
acc. IEC 664-1 and Term. to base:
prEN50124-1:1995 Term. to term:
acc. IEC 664-1 and Term. to base:
prEN50124-1:1995 Term. to term:
min.
10
10
14
14
320
typ.
max.
Unit
mm
mm
mm
mm
mm
gr
L* W* H Typical , see outline drawing
D
C
D
SC
121.5 * 61.5 * 20.5
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1521-00 Aug. 00
3 of 4
5SNS 0075W121100
Electrical configuration
Outline drawing
ABB Semiconductors reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
Email
Info@ch.abb.com
www.abbsem.com
Internet
Doc. No. 5SYA1521-00 Aug. 00
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