BLF7G22L-250P;
BLF7G22LS-250P
Power LDMOS transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
2110 MHz to 2170 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
I
Dq
(mA)
1900
V
DS
(V)
28
P
L(AV)
(W)
70
G
p
(dB)
18.5
D
(%)
31
ACPR
(dBc)
30
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing
5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2110 MHz to 2170 MHz frequency range
NXP Semiconductors
BLF7G22L-250P; BLF7G22LS-250P
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF7G22L-250P (SOT539A)
1
2
5
3
3
4
4
5
1
2
sym117
BLF7G22LS-250P (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
3
1
3
4
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G22L-250P
BLF7G22LS-250P
-
-
Flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
Earless flanged LDMOST ceramic package; 4 leads
Version
SOT539A
SOT539B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
65
+150
200
Unit
V
V
A
C
C
BLF7G22L-250P_22LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
2 of 14
NXP Semiconductors
BLF7G22L-250P; BLF7G22LS-250P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
R
th(j-c)
Thermal characteristics
Conditions
Typ
0.20
Unit
K/W
thermal resistance from junction to case T
case
= 80
C;
P
L
= 70 W;
V
DS
= 28 V; I
Dq
= 1900 mA
Symbol Parameter
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 180 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9 A
Min
65
1.5
-
28
-
-
-
Typ
-
1.9
-
34.2
-
13.7
Max
-
2.3
2.8
-
280
-
Unit
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 1.8 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 6.3 A
0.081 -
7. Test information
Table 7.
Functional test information
Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 1-64 DPCH; f
1
= 2112.5 MHz; f
2
= 2117.5 MHz; f
3
= 2162.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1900 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
P
L(AV)
G
p
RL
in
D
ACPR
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
P
L(AV)
= 70 W
P
L(AV)
= 70 W
P
L(AV)
= 70 W
P
L(AV)
= 70 W
Conditions
Min
-
17
-
27
-
Typ
70
18.5
15
31
30
Max
-
-
5
-
25
Unit
W
dB
dB
%
dBc
7.1 Ruggedness in class-AB operation
The BLF7G22L-250P and BLF7G22LS-250P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 30 V; I
Dq
= 1900 mA; P
L
= 250 W (CW); f = 2110 MHz to 2170 MHz.
BLF7G22L-250P_22LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
3 of 14
NXP Semiconductors
BLF7G22L-250P; BLF7G22LS-250P
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data half device; I
Dq
= 1900 mA; V
DS
= 28 V.
f
(MHz)
2050
2110
2140
2170
2230
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
()
1.50
j5.20
2.08
j5.64
2.16
j5.89
2.43
j5.97
3.94
j7.60
Z
L[1]
()
3.03
j2.92
2.76
j2.70
2.31
j2.74
2.31
j2.74
2.10
j2.96
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLF7G22L-250P_22LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
4 of 14
NXP Semiconductors
BLF7G22L-250P; BLF7G22LS-250P
Power LDMOS transistor
7.3 1 Tone CW
19.0
G
p
(dB)
18.5
(3)
(2)
(1)
aaa-001318
60
η
D
(%)
50
(3)
(2)
(1)
aaa-001319
18.0
40
17.5
30
17.0
20
16.5
16.0
0
50
100
150
200
250
350
P
L(AV)
(W)
300
10
0
50
100
150
200
250
300
350
P
L(AV)
(W)
V
DS
= 28 V; I
Dq
= 1900 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
V
DS
= 28 V; I
Dq
= 1900 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 2.
Power gain as a function of average load
power; typical values
Fig 3.
Drain efficiency as a function of average load
power; typical values
BLF7G22L-250P_22LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
5 of 14
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