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BLF7G22LS-250PB,11

Description
Power LDMOS transistor, SOT1110, Bulk Pack
CategoryDiscrete semiconductor    The transistor   
File Size985KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF7G22LS-250PB,11 Overview

Power LDMOS transistor, SOT1110, Bulk Pack

BLF7G22LS-250PB,11 Parametric

Parameter NameAttribute value
MakerNXP
Reach Compliance Codecompliant
BLF7G22L-250P;
BLF7G22LS-250P
Power LDMOS transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
2110 MHz to 2170 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
I
Dq
(mA)
1900
V
DS
(V)
28
P
L(AV)
(W)
70
G
p
(dB)
18.5
D
(%)
31
ACPR
(dBc)
30
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing
5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2110 MHz to 2170 MHz frequency range

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Reach Compliance Code compliant compliant compliant
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