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BLF6G38-10G/T3

Description
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,3.1A I(D),SOT-975C
CategoryDiscrete semiconductor    The transistor   
File Size104KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLF6G38-10G/T3 Overview

TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,3.1A I(D),SOT-975C

BLF6G38-10G/T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)3.1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Polarity/channel typeN-CHANNEL
surface mountYES
Base Number Matches1
BLF6G38-10; BLF6G38-10G
WiMAX power LDMOS transistor
Rev. 01 — 3 February 2009
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation
1-carrier N-CDMA
[1]
[1]
[2]
f
(MHz)
3400 to 3600
V
DS
(V)
28
P
L(AV)
(W)
2
G
p
(dB)
14
η
D
(%)
20
ACPR
885k
(dBc)
−49
[2]
ACPR
1980k
(dBc)
−64
[2]
Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an I
Dq
of 130 mA:
I
Qualified up to a maximum V
DS
operation of 32 V
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation
I
Internally matched for ease of use
I
Low gold plating thickness on leads
I
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

BLF6G38-10G/T3 Related Products

BLF6G38-10G/T3 BLF6G38-10/T3 934061847118
Description TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,3.1A I(D),SOT-975C TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,3.1A I(D),SOT-975B L BAND, Si, N-CHANNEL, RF POWER, MOSFET
Reach Compliance Code unknown unknown unknown
Configuration Single Single SINGLE
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
surface mount YES YES YES
Is it Rohs certified? conform to conform to -
Maximum drain current (Abs) (ID) 3.1 A 3.1 A -
Maximum operating temperature 200 °C 200 °C -
Base Number Matches 1 1 -
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