DATA SHEET
GaAs INTEGRATED CIRCUIT
µ
PG2015TB
L, S-BAND SPDT SWITCH
DESCRIPTION
The
µ
PG2015TB is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which were developed
for mobile phone and another L, S-band application.
This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin super minimold package. And this package is able to high-density surface
mounting.
FEATURES
• Supply voltage
• Switch control voltage
• Low insertion loss
: V
DD
= 2.7 to 3.0 V (2.8 V TYP.)
: V
cont (H)
= 2.7 to 3.0 V (2.8 V TYP.)
: V
cont (L)
=
−0.2
to +0.2 V (0 V TYP.)
: L
INS1
= 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V
: L
INS2
= 0.30 dB TYP. @ f = 1.0 to 2.0 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V
: L
INS3
= 0.35 dB TYP. @ f = 2.5 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V
• High isolation
• Middle power
• High-density surface mounting
: ISL
1
= 27 dB TYP. @ f = 0.5 to 2.0 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V
: ISL
2
= 24 dB TYP. @ f = 2.5 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V
: P
in
(0.1 dB)
= +27.0 dBm TYP. @ f = 2.5 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V
: 6-pin super minimold package (2.0
×
1.25
×
0.9 mm)
APPLICATIONS
• L-band digital cellular or cordless telephone
• PCS, W-LAN, WLL and Bluetooth
TM
etc.
ORDERING INFORMATION
Part Number
Package
6-pin super minimold
Marking
G3J
Supplying Form
•
Embossed tape 8 mm wide
•
Pin 1, 2, 3 face the perforation side of the tape
•
Qty 3 kpcs/reel
µ
PG2015TB-E3
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PG2015TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10356EJ02V0DS (2nd edition)
Date Published August 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 2003
µ
PG2015TB
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
3
4 3
(Top View)
4 4
(Bottom View)
3
Pin No.
1
Pin Name
OUTPUT1
GND
OUTPUT2
V
cont
INPUT
V
DD
G3J
2
3
4
2
5 2
5 5
2
1
6 1
6 6
1
5
6
TRUTH TABLE
V
cont
Low
High
INPUT−OUTPUT1
OFF
ON
INPUT−OUTPUT2
ON
OFF
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C, unless otherwise specified)
Parameter
Supply Voltage
Switch Control Voltage
Input Power
Operating Ambient Temperature
Storage Temperature
Symbol
V
DD
V
cont
P
in
T
A
T
stg
Ratings
+6.0
+6.0
+33
−45
to +85
−55
to +150
Unit
V
V
dBm
°C
°C
RECOMMENDED OPERATING RANGE (T
A
= +25°C, unless otherwise specified)
Parameter
Supply Voltage
Switch Control Voltage (H)
Switch Control Voltage (L)
Symbol
V
DD
V
cont(H)
V
cont(L)
MIN.
2.7
2.7
−0.2
TYP.
2.8
2.8
0
MAX.
3.0
3.0
0.2
Unit
V
V
V
2
Data Sheet PG10356EJ02V0DS
µ
PG2015TB
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified)
Parameter
Insertion Loss 1
Insertion Loss 2
Insertion Loss 3
Isolation 1
Isolation 2
Input Return Loss
Output Return Loss
0.1 dB Gain Compression
Input Power
Note
Symbol
L
INS1
L
INS2
L
INS3
ISL
1
ISL
2
RL
in
RL
out
Test Conditions
f = 0.5 to 1.0 GHz
f = 1.0 to 2.0 GHz
f = 2.5 GHz
f = 0.5 to 2.0 GHz
f = 2.5 GHz
f = 0.5 to 2.5 GHz
f = 0.5 to 2.5 GHz
MIN.
−
−
−
23
20
15
15
+25.5
+25.5
−
−
−
TYP.
0.25
0.30
0.35
27
24
20
20
+27.0
+27.0
50
4
0.3
MAX.
0.45
0.50
0.55
−
−
−
−
−
−
100
20
2.0
Unit
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
P
in(0.1 dB)
f = 2.0 GHz
f = 2.5 GHz
I
DD
I
cont
t
SW
Supply Current
Switching Control Current
Switching Control Speed
µ
A
µ
A
µ
s
Note
P
in(0.1dB)
is measured the input power level when the insertion loss increases more 0.1 dB than that of linear
range.
STANDARD CHARACTERISTICS FOR REFERENCE
(T
A
= +25°C, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified)
Parameter
1 dB Gain Compression
Input Power
Note
Symbol
P
in(1 dB)
Test Conditions
f = 2.0 GHz
MIN.
−
TYP.
+30.0
MAX.
−
Unit
dBm
Note
P
in(1dB)
is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
Caution This device is used it is necessary to use DC cut capacitors.
The value of DC cut capacitors should be chosen to accommodate the frequency of operation,
bandwidth, switching speed and the condition with actual board of your system. The range of
recommended DC cut capacitor value is less than 100 pF.
Data Sheet PG10356EJ02V0DS
3
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