SMLBFY90 datasheet, PDF - EEWORLD Datasheet

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SMLBFY90: DescriptionRF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-206AF, TO-72, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size57KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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SMLBFY90 Overview

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-206AF, TO-72, 4 PIN

SMLBFY90 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.025 A
Collector-based maximum capacity	1.5 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-206AF
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1000 MHz
Base Number Matches	1

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SILICON PLANAR EPITAXIAL NPN

TRANSISTOR

Semelab Limited

SMLBFY90

• LOW NOISE TRANSISTOR

• FOR USE IN BROAD AND NARROW-BAND

AMPLIFIERS UP TO 1GHz

ABSOLUTE MAXIMUM RATINGS

(

TA = 25°C unless otherwise stated

)

CBO

CER

CEO

EBO

C(AV)

tot

stg

Collector - Base Voltage

Collector - Emitter Voltage (R

≤

50Ω)

Collector - Emitter Voltage

Emitter - Base Voltage

Average Collector Current

Peak Collector Current (f

≥

1MHz)

Power Dissipation at T

= 25°C

Storage Temperature

Junction Temperature

30V

15V

2.5V

25mA

50mA

200mW

200°C

-65 to +200°C

THERMAL PROPERTIES

Parameters

θJA

θJC

Junction - ambient thermal resistance

Junction - case thermal resistance

Min.

Typ.

Max.

≤

880

≤

580

Unit

°C/W

* Pulse Test t

= 300μs,

δ ≤

(

1) Shield Lead (case) not connected

(2) Shield Lead (case) grounded

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB, UK.

Telephone: +44 (0) 1455 556565 Fax +44 (0) 1455 552612 E-mail:

sales@semelab.co.uk

SEMELAB

A subsidiary of

TT electronics plc.

Website:

http://www.semelab.co.uk

Document Number 7861

Issue 2

SMLBFY90 Related Products

	SMLBFY90
Description	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-206AF, TO-72, 4 PIN
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.025 A
Collector-based maximum capacity	1.5 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-206AF
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1000 MHz
Base Number Matches	1

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