A61L6316 Series
64K X 16 BIT HIGH SPEED CMOS SRAM
Document Title
64K X 16 BIT HIGH SPEED CMOS SRAM
Revision History
Rev. No.
0.0
1.0
History
Initial issue
Final spec. release
Add -10 spec.
Change I
CC1
from 120mA to 220mA (-12)
Change I
CC1
from 100mA to 210mA (-15)
Change I
SB1
from 8mA to 12mA
Change I
CDR
from 1mA to 5mA
Add t
BE
, t
BLZ
, t
BHZ
, t
BW
parameters
Issue Date
July 14, 2000
May 8, 2001
Remark
Preliminary
Final
1.1
Add -25°C ~ +85°C grade
July 17, 2002
(July, 2002, Version 1.1)
AMIC Technology, Inc.
A61L6316 Series
64K X 16 BIT HIGH SPEED CMOS SRAM
Features
n
Center power pinout
n
Supply voltage: -10: 3.3V+10%, -5%
-12, -15: 3.3V±10%
n
Access times: 10/12/15 ns (max.)
n
Current: Operating: -10: 230mA (max)
-12: 220mA (max.)
-15: 210mA (max.)
Standby: TTL: 25mA (max.)
CMOS: 12mA (max.)
n
Extended operating temperature range: -25°C to 85°C
for -I series
n
Full static operation, no clock or refreshing required
n
All inputs and outputs are directly TTL-compatible
n
Common I/O using three-state output
n
Data retention voltage: 2V (min.)
n
Available in 44-pin 400mil SOJ and 44-pin 400mil
TSOP(II) forward packages.
General Description
The A61L6316 is a high speed 1,048,576-bit static
random access memory organized as 65,536 words by 16
bits and operates on low power supply voltage from 3.0V
to 3.6V. It is built using AMIC’s high performance CMOS
process.
Inputs and three-state outputs are TTL compatible and
allow for direct interfacing with common system bus
structures.
The chip enable input is provided for POWER-DOWN, to
disable the device. Two byte enable inputs and an output
enable input are included for easy interfacing.
Data retention is guaranteed at a power supply voltage as
low as 2V.
Product Family
Product
Family
A61L6316
Operating
Temperature
0°C ~ +70°C
-25°C ~ +85°C
VCC Range
Power Dissipation
Speed
10/12/15 ns
Data Retention
(I
CCDR
, Typ.)
3mA
Standby
(I
SB1
, Typ.)
5mA
Package
Type
44L SOP
44L TSOP(II)
3.0V ~ 3.6V
1. Typical values are measured at VCC = 3.3V, T
A
= 25°C and not 100% tested.
2. Data retention current VCC = 2.0V.
Pin Configuration
n
SOJ / TSOP (II)
A0
A1
A2
A3
A4
CE
I/O
0
I/O
1
I/O
2
I/O
3
VCC
GND
I/O
4
I/O
5
I/O
6
I/O
7
WE
A5
A6
A7
A8
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A15
A14
A13
OE
HB
LB
I/O
15
I/O
14
I/O
13
I/O
12
GND
VCC
I/O
11
I/O
10
I/O
9
I/O
8
NC
A12
A11
A10
A9
NC
A61L6316S(V)
1
(July, 2002, Version 1.1)
AMIC Technology, Inc.
A61L6316 Series
Block Diagram
A0
VCC
GND
1,048,576-BIT
DECODER
A14
MEMORY ARRAY
A15
I/O
0
COLUMN I/O
INPUT
DATA
CIRCUIT
I/O
8
INPUT
DATA
CIRCUIT
I/O
7
I/O
15
CE
LB
HB
OE
WE
CONTROL
CIRCUIT
(July, 2002, Version 1.1)
2
AMIC Technology, Inc.
A61L6316 Series
Pin Description - SOJ/TSOP(II)
Pin No.
1 - 5, 18 - 21,
24 - 27,42 - 44
6
7 - 10, 13 - 16,
29 - 32, 35 - 38
17
39
40
41
11, 33
12, 34
22 , 23, 28
Symbol
A0 - A15
CE
I/O
0
- I/O
15
WE
LB
HB
OE
VCC
GND
NC
Description
Address Inputs
Chip Enable Input
Data Input/Outputs
Write Enable Input
Byte Enable Input (I/O
0
to I/O
7
)
Byte Enable Input (I/O
8
to I/O
15
)
Output Enable Input
Power
Ground
No Connection
Recommended DC Operating Conditions
(T
A
= 0°C to + 70°C or -25°C to +85°C)
Symbol
*VCC
GND
V
IH
V
IL
C
L
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Output Load
Min.
3.0
0
2.2
-0.3
-
Typ.
3.3
0
-
-
-
Max.
3.6
0
VCC + 0.3
0.8
30
Unit
V
V
V
V
pF
* -10 V
CC
min
: 3.135V
(July, 2002, Version 1.1)
3
AMIC Technology, Inc.
A61L6316 Series
Absolute Maximum Ratings*
VCC to GND . . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V
IN, IN/OUT Volt to GND . . . . . . . . -0.5V to VCC + 0.5V
Operating Temperature, Topr . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . 0°C to +70°C or -25°C to +85°C
Storage Temperature, Tstg . . . . . . . . . -55°C to +125°C
Power Dissipation, P
T
. . . . . . . . . . . . . . . . . . . . . 0.7W
Soldering Temp. & Time . . . . . . . . . . . . . 260°C, 10 sec
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.
DC Electrical Characteristics
(T
A
= 0°C to + 70°C or -25°C to +85°C, -10: 3.3V+10%, -5%; -12, -15: 3.3V±10%)
Symbol
Parameter
A61L6316-10
Min.
I
LI
I
LO
Input Leakage
Output Leakage
-
-
Max.
2
2
A61L6316-12
Min.
-
-
Max.
2
2
A61L6316-15
Min.
-
-
Max.
2
2
µA
µA
V
IN
= GND to VCC
CE = V
IH
, OE = V
IH
V
I/O
= GND to VCC
CE = V
IL
, I
I/O
= 0 mA
Min. Cycle, Duty = 100%
CE = V
IH
CE
≥
VCC - 0.2V,
V
IN
≥
VCC -0.2V or
V
IN
≤
0.2V
I
OL
= 8 mA
I
OH
= -4 mA
Unit
Conditions
I
CC1
(2)
I
SB
Dynamic Operating
Current
-
-
230
25
-
-
220
25
-
-
210
25
mA
mA
I
SB1
Standby Power
Supply Current
-
12
-
12
-
12
mA
V
OL
V
OH
Output Low Voltage
Output High Voltage
-
2.4
0.4
-
-
2.4
0.4
-
-
2.4
0.4
-
V
V
Notes: 1. V
IL
= -3.0V for pulses less than 20 ns.
2. I
CC1
is dependent on output loading, cycle rates, and Read/Write patterns.
(July, 2002, Version 1.1)
4
AMIC Technology, Inc.
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