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S9015-D-B

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size156KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric Compare View All

S9015-D-B Overview

Transistor

S9015-D-B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
JESD-609 codee0
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
S9015
S9015-B
S9015-C
S9015-D
PNP Silicon
Transistors
TO-92
A
E
Features
TO-92 Plastic-Encapsulate Transistors
Capable of 0.45Watts(Tamb=25
O
C) of Power Dissipation.
Collector-curr ent
-0.1A
Collector-base Voltage
-50V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Marking: S9015
Case Material: Molded Plastic.
Classification Rating 94V-0
UL Flammability
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=
-100uAdc,
I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=
-1.0mAdc,
I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=
-100uAdc,
I
C
=0)
Collector Cutoff Current
(V
CB
=
-50Vdc,
I
E
=0)
Emitter Cutoff Current
(V
EB
=
-5.0Vdc,
I
C
=0)
DC Current Gain
(I
C
=
-1.0mAdc,
V
CE
=
-5.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=
-100mAdc,
I
B
=
-10mAdc)
Base-Emitter Saturation Voltage
(I
C
=
-100mAdc,
I
B
=
-10mAdc)
Transistor Frequency
(I
C
=-10mAdc, V
CE
=-5.0Vdc, f=30MHz)
Min
-50
-45
-5.0
---
---
Max
---
---
---
-0.05
-0.05
Units
Vdc
Vdc
Vdc
uAdc
uAdc
B
E
B
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
C
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(sat)
60
---
---
1000
-0.3
-1.0
---
Vdc
Vdc
D
SMALL-SIGNAL CHARACTERISTICS
f
T
150
---
MHz
G
DIMENSIONS
INCHES
MIN
.170
.170
.550
.010
.130
.010
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
CLASSIFICATION OF H
FE
Rank
Range
B
100-300
C
200-600
D
400-1000
DIM
A
B
C
D
E
G
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
www.mccsemi.com
Revision:
7
1 of
3
2007/12/20

S9015-D-B Related Products

S9015-D-B S9015-D S9015-C
Description Transistor Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3
Is it Rohs certified? incompatible incompatible incompatible
package instruction , CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown compliant compli
JESD-609 code e0 e0 e0
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD
Base Number Matches 1 1 -
Parts packaging code - TO-92 TO-92
Contacts - 3 3
ECCN code - EAR99 EAR99
Maximum collector current (IC) - 0.1 A 0.1 A
Collector-emitter maximum voltage - 45 V 45 V
Configuration - SINGLE SINGLE
Minimum DC current gain (hFE) - 400 200
JEDEC-95 code - TO-92 TO-92
JESD-30 code - O-PBCY-T3 O-PBCY-T3
Number of components - 1 1
Number of terminals - 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - ROUND ROUND
Package form - CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - PNP PNP
Certification status - Not Qualified Not Qualified
surface mount - NO NO
Terminal form - THROUGH-HOLE THROUGH-HOLE
Terminal location - BOTTOM BOTTOM
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
Transistor component materials - SILICON SILICON
Nominal transition frequency (fT) - 150 MHz 150 MHz
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