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S9015-C

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size156KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric Compare View All

S9015-C Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3

S9015-C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
S9015
S9015-B
S9015-C
S9015-D
PNP Silicon
Transistors
TO-92
A
E
Features
TO-92 Plastic-Encapsulate Transistors
Capable of 0.45Watts(Tamb=25
O
C) of Power Dissipation.
Collector-curr ent
-0.1A
Collector-base Voltage
-50V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Marking: S9015
Case Material: Molded Plastic.
Classification Rating 94V-0
UL Flammability
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=
-100uAdc,
I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=
-1.0mAdc,
I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=
-100uAdc,
I
C
=0)
Collector Cutoff Current
(V
CB
=
-50Vdc,
I
E
=0)
Emitter Cutoff Current
(V
EB
=
-5.0Vdc,
I
C
=0)
DC Current Gain
(I
C
=
-1.0mAdc,
V
CE
=
-5.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=
-100mAdc,
I
B
=
-10mAdc)
Base-Emitter Saturation Voltage
(I
C
=
-100mAdc,
I
B
=
-10mAdc)
Transistor Frequency
(I
C
=-10mAdc, V
CE
=-5.0Vdc, f=30MHz)
Min
-50
-45
-5.0
---
---
Max
---
---
---
-0.05
-0.05
Units
Vdc
Vdc
Vdc
uAdc
uAdc
B
E
B
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
C
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(sat)
60
---
---
1000
-0.3
-1.0
---
Vdc
Vdc
D
SMALL-SIGNAL CHARACTERISTICS
f
T
150
---
MHz
G
DIMENSIONS
INCHES
MIN
.170
.170
.550
.010
.130
.010
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
CLASSIFICATION OF H
FE
Rank
Range
B
100-300
C
200-600
D
400-1000
DIM
A
B
C
D
E
G
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
www.mccsemi.com
Revision:
7
1 of
3
2007/12/20

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S9015-C S9015-D S9015-D-B
Description Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3 Transistor
Is it Rohs certified? incompatible incompatible incompatible
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 ,
Reach Compliance Code compli compliant unknown
JESD-609 code e0 e0 e0
Terminal surface TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Parts packaging code TO-92 TO-92 -
Contacts 3 3 -
ECCN code EAR99 EAR99 -
Maximum collector current (IC) 0.1 A 0.1 A -
Collector-emitter maximum voltage 45 V 45 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 200 400 -
JEDEC-95 code TO-92 TO-92 -
JESD-30 code O-PBCY-T3 O-PBCY-T3 -
Number of components 1 1 -
Number of terminals 3 3 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape ROUND ROUND -
Package form CYLINDRICAL CYLINDRICAL -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type PNP PNP -
Certification status Not Qualified Not Qualified -
surface mount NO NO -
Terminal form THROUGH-HOLE THROUGH-HOLE -
Terminal location BOTTOM BOTTOM -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 150 MHz 150 MHz -
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