MITSUMI
Photoflash Charge IC with a built-in IGBT driver MM3456
Photoflash Charge IC with a built-in IGBT driver
Monolithic IC MM3456
Outline
This IC is a photoflash charge IC with a built-in IGBT driver, which has functions to charge photoflash
capacitors and flash xenon tubes of digital still cameras and cell phones.
High efficient charging is achieved due to built-in switching FET with 40V withstanding voltage and low ON
resistance (Ron = 0.25 ).
Moreover, the primary peak current limitation up to 2A makes fast charging to the photoflash capacitor
possible.
Furthermore, this IC contains functions such as double protection for battery full-charge detection at the
primary and secondary sides, thermal shutdown, and in addition to the IGBT driver.
This IC uses small SSON-10 package.
Features
1. High efficiency charging due to built-in switching FET with 40V withstanding voltage and low ON resistance
(Ron = 0.25 )
2. Peak current at the primary side of the transformer is programmable up to1.0-2.0A ( 3 levels, 2 ranks), fast
charging
3. Built-in IGBT driver
4. High accuracy output voltage control (±1%)
5. Input voltage : 2.5V - 6.0V
6. Protective functions
Thermal shutdown
Maximum ON time
Double protection for battery full-charge detection
7. Small SSON-10 package
(2.5mm×2.7mm×0.6mm MAX)
Package
SSON-10
Applications
1. Digital still cameras
2. Camera phones
3. PDAs
MITSUMI
Photoflash Charge IC with a built-in IGBT driver MM3456
Block Diagram
VBAT
C1
BAT
SW
T1
D1
C
out
V
out
UVLO1
V
zero
Secondary Side Zero
Current Detection
TSD
Control Logic
I
SW
DRIVER
TRIGGER
COIL
Xenon
FLASH
LAMP
VCC
IPEAK
UVLO2
IREF
S
Q
R
Max ON Time
40V
DMOS
– +
VCC
100k
DONE
CHG
Output Voltage Detection 1
Rp
100k
Enable
Output Voltage Detection 2
Secondary Side Over
Voltage Detect Pin
OV
(For second protection)
IGBT Driver
TRIG
Rp
100k
GND
IGBT
IGBT
Pin Assignment
1
10
2
9
3
8
4
7
1
2
3
4
5
6
7
8
9
10
SW
BAT
DONE
VCC
IGBT
OV
IPEAK
TRIG
CHG
GND
5
6
SSON-10
(TOP VIEW)
MITSUMI
Photoflash Charge IC with a built-in IGBT driver MM3456
Pin Description
Pin No.
1
2
3
4
5
Pin name
SW
BAT
DONE
VCC
IGBT
OV
Pin description
Built-in DMOS power FET drain pin. Connect to primary side of the transformer.
Battery voltage input pin. Connect to + side of the battery pack.
Charge completion signal output pin (Nch open drain output).
L : Charge completion, H : Charge non-completion.
Power supply input pin.
IGBT gate drive output pin. Connect to the gate of IGBT.
Secondary side overvoltage detection pin. (For second protection)
6
Please connect to the GND when the input pin unused.
(Cf. applied circuit example)
7
8
9
10
IPEAK
TRIG
CHG
GND
Primary side peak current setting pin.
Can set 3 phases of electric currents by GND or VCC connection or opening.
Flash signal input pin.
Charge enable input terminal.
H : Charge ON, L : Charge OFF.
Ground pin.
MITSUMI
Photoflash Charge IC with a built-in IGBT driver MM3456
Absolute Maximum Ratings
Item
Storage Temperature
BAT, IPEAK, CHG, DONE,
TRIG, IGBT, OV, VCC
Pin Input Voltage
SW Pin Voltage
Power dissipation
Symbol
T
stg
V
in
V
SW
Pd
Ratings
−55~+150
−0.3~+7.0
−0.3~+40 (Note1)
2.25 (Note2)
Units
°C
V
V
W
Note1 : When in use, make sure that the voltage exceeding the maximum rating is not
applied even momentarily.
Note2 : When mounted on a 40×40×1.6tmm(Copper foil area 50%, FR4) PC bord.
Recommended Operating Conditions
Item
Operating Temperature
VCC Operating Voltage
BAT Operating Voltage
Symbol
T
opr
V
ccop
V
batop
Ratings
-40~+85
2.5~6.0
1.6~6.0
Units
°C
V
V
MITSUMI
Photoflash Charge IC with a built-in IGBT driver MM3456
Electrical Characteristics
Item
VCC Supply Current 1
VCC Supply Current 2
VCC Supply Current 3
BAT Supply Current 1
BAT Supply Current 2
UVLO1 Detection Voltage (VCC)
UVLO1 hysterisys
UVLO2 Detection Voltage (BAT)
SW Peak Current 1
(Except where noted otherwise Ta=25°C, VCC=3.3V, VBAT=3.6V)
Measurement conditions
Min. Typ. Max. Units
1.3
1
20
2.2
2.3
100
1.2
Arank
Brank
Arank
Brank
Arank
Brank
0.9
1.5
1.1
1.68
1.3
1.85
1.0
1.6
1.2
1.80
1.4
2.0
0.25
50
21.78
22
1.1
1.7
1.3
1.92
1.5
2.15
1
0.45
100
22.22
0.1
0.8
2.0
5
10
1
35
1
2.4
mA
µA
µA
µA
µA
V
mV
V
A
A
A
µA
Ω
mV
V
V
µA
V
V
100k
0.1
1
0.8
2.0
Ω
V
µA
V
V
100k
5
6
100
150
9
11
Ω
Ω
Ω
µs
°C
Symbol
I
CC
1
I
CC
2
I
CC
3
Ibat1
Ibat2
V
uvlo
1
V
uvlo
1hys
V
uvlo
2
Ipeak1
Charging (CHG=3.3V)
Full-charge
Shutdown (CHG=0V)
Charging (CHG=3.3V)
Shutdown (CHG=0V)
VIPEAK=0V
VIPEAK=open
VIPEAK=3.3V
V
sw
=35V
I
sw
=0.8A
VSW-VBAT
SW Peak Current 2
Ipeak2
SW Peak Current 3
SW Leakage Current
SW On Resistance
Zero Current Ditection
Full-charge Detection 1 (V
SW
)
Full-charge Detection 2 (V
OV
)
OV Input Current
CHG Input Voltage L
CHG Input Voltage H
CHG Input Resistance
DONE Output Voltage L
DONE SW Leakage Current
TRIG Input Voltage L
TRIG Input Voltage H
TRIG Input Resistance
IGBT Pull-up Resistance
IGBT Pull-down Resistance
Max On Time
Thermal shutdown temperature (Note3)
Ipeak3
I
swleak
R
on
V
zero
V
cp
1
V
cp
2
I
OV
V
chgl
V
chgh
R
chg
Vdone
Idleak
V
tril
V
trih
R
tri
R
pu
R
pd
tmax
tsd
1.182 1.200 1.218
CHG-GND Resistance
VCC=3.3V, Rpullup=100kΩ
Vdone=3.3V
TRIG-GND Resistance
IGBT=0V
IGBT=3.3V
Note3 : The parameter is guaranteed by design