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IXTA2R4N120P

Description
Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size327KB,6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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IXTA2R4N120P Overview

Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

IXTA2R4N120P Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codenot_compliant
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)200 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1200 V
Maximum drain current (Abs) (ID)2.4 A
Maximum drain current (ID)2.4 A
Maximum drain-source on-resistance7.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)6 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Polar
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA2R4N120P
IXTP2R4N120P
IXTH2R4N120P
V
DSS
I
D25
R
DS(on)
= 1200V
= 2.4A
7.5
TO-263 (IXTA)
G
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25C
Maximum Ratings
1200
1200
30
40
2.4
6.0
2.4
200
10
125
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
N/lb
Nm/lb.in
g
g
g
G
D
S
G
D
S
S
D (Tab)
TO-220 (IXTP)
D (Tab)
TO-247 (IXTH)
D
(Tab)
D
= Drain
Tab = Drain
G = Gate
S = Source
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
300
260
Features
10..65 / 2.2..14.6
1.13 / 10
2.5
3.0
6.0
International Standard Packages
Low Q
G
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
6.5
Characteristic Values
Min.
Typ.
Max.
1200
2.5
4.5
V
V
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Discharge Circiuts in Lasers, Spark
Igniters, RF Generators

High Voltage Pulse Power
Applications
High Power Density
Easy to Mount
Space Savings
Applications
100
nA
5
A
300
A
7.5
V
GS
= 10V, I
D
= 0.5
I
D25
, Note 1
© 2018 IXYS CORPORATION, All rights reserved
DS99873B(6/18)

IXTA2R4N120P Related Products

IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P
Description Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Is it Rohs certified? conform to conform to conform to
package instruction SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 TO-220, 3 PIN
Reach Compliance Code not_compliant compliant compliant
Other features AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 200 mJ 200 mJ 200 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 1200 V 1200 V 1200 V
Maximum drain current (Abs) (ID) 2.4 A 2.4 A 2.4 A
Maximum drain current (ID) 2.4 A 2.4 A 2.4 A
Maximum drain-source on-resistance 7.5 Ω 7.5 Ω 7.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-247AD TO-220AB
JESD-30 code R-PSSO-G2 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e1 e3
Number of components 1 1 1
Number of terminals 2 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 125 W 125 W
Maximum pulsed drain current (IDM) 6 A 6 A 6 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES NO NO
Terminal surface Matte Tin (Sn) Tin/Silver/Copper (Sn/Ag/Cu) Matte Tin (Sn)
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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