IRF331R datasheet, PDF - EEWORLD Datasheet

IRF331R: DescriptionTRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,5.5A I(D),TO-204AA; CategoryDiscrete semiconductor The transistor; File Size176KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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IRF331R Overview

TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,5.5A I(D),TO-204AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	not_compliant
Configuration	Single
Maximum drain current (Abs) (ID)	5.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	75 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

	IRF331R	IRF332R	IRF333R	IRF330R
Description	TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,5.5A I(D),TO-204AA	TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,4.5A I(D),TO-204AA	TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,4.5A I(D),TO-204AA	TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,5.5A I(D),TO-204AA
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant
Configuration	Single	Single	Single	Single
Maximum drain current (Abs) (ID)	5.5 A	4.5 A	4.5 A	5.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	75 W	75 W	75 W	75 W
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maker	-	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation

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