TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,4.5A I(D),TO-204AA
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Renesas Electronics Corporation |
| Reach Compliance Code | not_compliant |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 4.5 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 75 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 |
| IRF332R | IRF331R | IRF333R | IRF330R | |
|---|---|---|---|---|
| Description | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,4.5A I(D),TO-204AA | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,5.5A I(D),TO-204AA | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,4.5A I(D),TO-204AA | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,5.5A I(D),TO-204AA |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant |
| Configuration | Single | Single | Single | Single |
| Maximum drain current (Abs) (ID) | 4.5 A | 5.5 A | 4.5 A | 5.5 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 75 W | 75 W | 75 W | 75 W |
| surface mount | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Maker | Renesas Electronics Corporation | - | Renesas Electronics Corporation | Renesas Electronics Corporation |