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IRF333R

Description
TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,4.5A I(D),TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size176KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

IRF333R Overview

TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,4.5A I(D),TO-204AA

IRF333R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Reach Compliance Codenot_compliant
ConfigurationSingle
Maximum drain current (Abs) (ID)4.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

IRF333R Related Products

IRF333R IRF332R IRF331R IRF330R
Description TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,4.5A I(D),TO-204AA TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,4.5A I(D),TO-204AA TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,5.5A I(D),TO-204AA TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,5.5A I(D),TO-204AA
Is it Rohs certified? incompatible incompatible incompatible incompatible
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
Configuration Single Single Single Single
Maximum drain current (Abs) (ID) 4.5 A 4.5 A 5.5 A 5.5 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0 e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 75 W 75 W 75 W 75 W
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maker Renesas Electronics Corporation Renesas Electronics Corporation - Renesas Electronics Corporation

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