IRFBG22-005 datasheet, PDF - EEWORLD Datasheet

IRFBG22-005: DescriptionPower Field-Effect Transistor, 1.2A I(D), 1000V, 13.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size41KB，1 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRFBG22-005 Overview

Power Field-Effect Transistor, 1.2A I(D), 1000V, 13.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (ID)	1.2 A
Maximum drain-source on-resistance	13.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	4.8 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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