BUK7905-40AI
TrenchPLUS standard level FET
Rev. 01 — 9 February 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance and TrenchPLUS
current sensing.
1.2 Features
s
Integrated current sensor
s
Standard level compatible.
1.3 Applications
s
Variable Valve Timing for engines
s
Electrical Power Assisted Steering.
1.4 Quick reference data
s
V
DS
≤
40 V
s
I
D
≤
155 A
s
R
DSon
= 4.5 mΩ (typ)
s
I
D
/I
sense
= 500 (typ).
2. Pinning information
Table 1:
Pin
1
2
3
4
5
mb
Pinning - SOT263B simplified outline and symbol
Description
gate (g)
mb
d
Simplified outline
Symbol
I
sense
(I
s
)
drain (d)
Kelvin source
source (s)
mounting base;
connected to drain (d)
1
5
MBL263
g
Isense s
Kelvin source
03nl64
SOT263B (TO-220)
Philips Semiconductors
BUK7905-40AI
TrenchPLUS standard level FET
3. Ordering information
Table 2:
Ordering information
Package
Name
BUK7905-40AI
D
2
-PAK
Description
Plastic single ended package; heatsink mounted; 1 mounting hole; 5-lead
TO-220
Version
SOT263B
Type number
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T
mb
= 25
°C;
V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°C;
V
GS
= 10 V;
Figure 2
I
DM
P
tot
T
stg
T
j
I
DR
I
DRM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current (DC)
peak reverse drain current
non-repetitive drain-source
avalanche energy
T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
unclamped inductive load; I
D
= 75 A;
V
DS
≤
40 V; V
GS
= 10 V;
R
GS
= 50
Ω;
starting T
j
= 25
°C
Human Body Model; C = 100 pF;
R = 1.5 kΩ
[1]
[2]
[1]
[2]
[2]
Conditions
R
GS
= 20 kΩ
Min
-
-
-
-
-
-
-
-
−55
−55
-
-
-
-
Max
40
40
±20
155
75
75
620
272
+175
+175
155
75
620
1.46
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
J
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
Figure 3
T
mb
= 25
°C;
Figure 1
Source-drain diode
Avalanche ruggedness
Electrostatic discharge
V
esd
electrostatic discharge voltage; all
pins
-
4
kV
[1]
[2]
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
9397 750 12346
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 9 February 2004
2 of 14
Philips Semiconductors
BUK7905-40AI
TrenchPLUS standard level FET
120
Pder
(%)
80
03na19
160
ID
(A)
120
03ng16
80
40
40
Capped at 75A due to package
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
Tmb (ºC)
200
P
tot
P
der
=
----------------------
×
100%
-
P
°
tot
(
25 C
)
V
GS
≥
10 V
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
ID
(A)
03ng17
Limit RDSon = VDS/ID
tp = 10 µs
102
Capped at 75 A due to package
100 µs
1 ms
DC
10
100 ms
10 ms
1
1
10
VDS (V)
102
T
mb
= 25
°C;
I
DM
single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12346
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 9 February 2004
3 of 14
Philips Semiconductors
BUK7905-40AI
TrenchPLUS standard level FET
5. Thermal characteristics
Table 4:
Symbol
R
th(j-a)
R
th(j-mb)
Thermal characteristics
Parameter
SOT263B
thermal resistance from junction to
mounting base
Figure 4
Conditions
Min
-
-
Typ Max Unit
60
-
-
K/W
thermal resistance from junction to ambient vertical in still air
0.55 K/W
5.1 Transient thermal impedance
1
Z
th(j-mb)
(K/W)
03ni64
δ
= 0.5
10-1
0.2
0.1
0.05
0.02
10-2
P
δ
=
tp
T
single shot
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 12346
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 9 February 2004
4 of 14
Philips Semiconductors
BUK7905-40AI
TrenchPLUS standard level FET
6. Characteristics
Table 5: Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
(BR)DSS
Parameter
drain-source breakdown
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°C
T
j
= 175
°C
T
j
=
−55 °C
I
DSS
drain-source leakage current
V
DS
= 40 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 175
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
V
GS
=
±20
V; V
DS
= 0 V
T
j
= 25
°C
V
GS
= 10 V; I
D
= 50 A;
Figure 7
and
8
T
j
= 25
°C
T
j
= 175
°C
R
D(Is)on
drain-I
sense
on-state
resistance
V
GS
= 10 V; I
D
= 25 mA;
Figure 16
T
j
= 25
°C
T
j
= 175
°C
I
D
/I
sense
ratio of drain current to sense V
GS
> 10 V; R
sense
= 0
Ω;
current
−55 °C
< T
j
< 175
°C
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
measured from upper edge
of drain mounting base to
center of die
measured from source lead
to source bond pad
Rev. 01 — 9 February 2004
Min
Typ
Max
Unit
Static characteristics
40
36
-
-
-
-
V
V
2
1
-
-
-
-
3
-
-
0.1
-
2
4
-
4.4
10
500
100
V
V
V
µA
µA
nA
-
-
4.5
-
5
9.5
mΩ
mΩ
0.98
1.86
450
1.08
2.05
500
1.18
2.24
550
Ω
Ω
Dynamic characteristics
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
d
V
GS
= 10V; V
DS
= 32 V;
I
D
= 25 A;
Figure 14
-
-
-
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
-
-
-
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V; R
G
= 10
Ω
-
-
-
-
-
120
19
50
4300
1400
820
35
115
155
110
2.5
127
22
60
5000
1670
1100
-
-
-
-
-
nC
nC
nC
pF
pF
pF
nS
nS
nS
nS
nH
L
s
9397 750 12346
internal source inductance
-
7.5
-
nH
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
5 of 14
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