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GS881Z32BD-200IV

Description
ZBT SRAM, 256KX32, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
Categorystorage    storage   
File Size1MB,37 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Download Datasheet Parametric View All

GS881Z32BD-200IV Overview

ZBT SRAM, 256KX32, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165

GS881Z32BD-200IV Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time6.5 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY
JESD-30 codeR-PBGA-B165
JESD-609 codee0
length15 mm
memory density8388608 bit
Memory IC TypeZBT SRAM
memory width32
Number of functions1
Number of terminals165
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX32
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
Base Number Matches1
GS881Z18/32/36B(T/D)-xxxV
100-Pin TQFP & 165-Bump BGA
Commercial Temp
Industrial Temp
Features
• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization
• Fully pin-compatible with both pipelined and flow through
NtRAM™, NoBL™ and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 18M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard packages
• RoHS-compliant 100-lead TQFP and 165-bump BGA
packages available
9Mb Pipelined and Flow Through
Synchronous NBT SRAM
250 MHz–150 MHz
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
Functional Description
m
om
en
The GS881Z18/32/36B(T/D)-xxxV is a 9Mbit Synchronous
Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL
or other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
de
Paramter Synopsis
-250
t
KQ
tCycle
3.0
4.0
200
230
5.5
5.5
160
185
d
The GS881Z18/32/36B(T/D)-xxxV may be configured by the
user to operate in Pipeline or Flow Through mode. Operating
as a pipelined synchronous device, in addition to the rising-
edge-triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS881Z18/32/36B(T/D)-xxxV is implemented with GSI's
high performance CMOS technology and is available in
JEDEC-standard 100-pin TQFP and 165-bump BGA packages.
fo
r
N
-200
3.0
5.0
170
195
6.5
6.5
140
160
ew
D
-150
3.8
6.7
140
160
7.5
7.5
128
145
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
ec
ot
R
Pipeline
3-1-1-1
Curr (x18)
Curr (x32/x36)
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
Rev: 1.01a 2/2008
N
Flow Through
2-1-1-1
1/37
es
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ig
n
© 2006, GSI Technology
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