MA4E2508 Series
SURMOUNT
TM
Low, Medium, & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
Features
•
Extremely Low Parasitic Capitance & Induc-
tance
•
Surface Mountable in Microwave Circuits, No
Wirebonds Required
•
Rugged HMIC Construction with polyimide
Scratch Protection
•
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100 % Stabilization Bake (300°C, 16
hours)
•
Lower Susceptibility to ESD Damage
M/A-COM Products
Rev. V3
Case Style 1112
A
B
Description
The MA4E2508 SURMOUNT
TM
Anti-Parallel Diode
Series are Silicon Low, Medium, & High Barrier
Schottky Devices fabricated with the patented Het-
erolithic Microwave Integrated Circuit (HMIC) proc-
ess. HMIC circuits consist of Silicon pedestals
which form diodes or via conductors embedded in
a glass dielectric, which acts as the low dispersion,
low loss, microstrip transmission medium. The
combination of silicon and glass allows HMIC de-
vices to have excellent loss and power dissipation
characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior me-
chanical performance of a chip. The SurMount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic dis-
charge than conventional beam lead Schottky di-
odes.
The multi-layer metalization employed in the fabri-
cation of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all de-
vices to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0502” outline allows for Surface Mount place-
ment and multi- functional polarity orientations.
C
D
E
D
Case Style 1112
DIM
A
B
C
D Sq.
E
INCHES
MIN.
0.0445
0.0169
0.0040
0.0128
0.0128
MILLIMETERS
MIN.
1.130
0.430
0.102
0.325
0.325
MAX.
0.0465
0.0189
0.0080
0.0148
0.0148
MAX.
1.180
0.480
0.203
0.375
0.375
Equivalent Circuit
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E2508 Series
SURMOUNT
TM
Low, Medium, & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
Electrical Specifications @ 25°C
1,2
Model
Number
MA4E2508L
MA4E2508M
MA4E2508H
M/A-COM Products
Rev. V3
Type
Recommended
Freq. Range
DC - 18 GHz
DC - 18 GHz
DC - 18 GHz
Vf @ 1 mA
(mV)
330 Max
300 Typ
470 Max
420 Typ
700 Max
650 Typ
Ct @ 0 V
(pF)
0.24 Max
0.18 Typ
0.24 Max
0.18 Typ
0.24 Max
0.18 Typ
Rt Slope Resistance
(Vf1 - Vf2) / (10.5 mA - 9.5 mA)
(Ω)
16 Typical
20 Max
12 Typical
18 Max
6 Typical
8 Max
Low Barrier
Medium Barrier
High Barrier
1. Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the ohmic resistance.
2. Max forward voltage difference
ΔVf
@ 1mA: 10mV
Applications
The MA4E2508 Family of Surmount Schottky diodes
are recommended for use in microwave circuits
through Ku band frequencies for lower power applica-
tions such as mixers, sub-harmonic mixers, detectors
and limiters. The HMIC construction facilitates the
direct replacement of more fragile beam lead diodes
with the corresponding Surmount diode, which can be
connected to a hard or soft substrate circuit with sol-
der.
Absolute Maximum Ratings @ 25°C
(unless otherwise noted)
1
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Forward Current
Reverse Voltage
RF C.W. Incident Power
Absolute Maximum
-40°C to +125°C
-40°C to +150°C
+175°C
20 mA
5V
+20 dBm
50 mW
Class 0
Handling
All semiconductor chips should be handled with care
to avoid damage or contamination from perspiration
and skin oils. The use of plastic tipped tweezers or
vacuum pickups is strongly recommended for individ-
ual components. The top surface of the die has a
protective polyimide coating to minimize the damage.
The rugged construction of these Surmount devices
allows the use of standard handling and die attach
techniques. It is important to note that industry stan-
dard electrostatic discharge (ESD) control is required
at all times, due to the sensitive nature of Schottky
junctions. Bulk handling should insure that abrasion
and mechanical shock are minimized.
1.
2.
RF & DC Dissipated Power
Electrostatic Discharge
2
( ESD ) Classification
damage.
Human Body Model
Exceeding any of these values may cause permanent
Die Bonding
For hard substrates, we recommend utilizing a vac-
uum tip and force of 60 to 100 grams applied uni-
formly to the top surface of the device, using a hot gas
bonder with equal heat applied across the bottom
mounting pads of the device. When soldering to soft
substrates, it is recommended to use a lead-tin inter-
face at the circuit board mounting pads. Position the
die so that its mounting pads are aligned with the cir-
cuit board mounting pads. Reflow the solder paste by
applying equal heat to the circuit at both die-mounting
pads. The solder joint must not be made one at a
time, creating un-equal heat flow and thermal stress.
Solder reflow should not be performed by causing
heat to flow through the top surface of the die. Since
the HMIC glass is transparent, the edges of the
mounting pads can be visually inspected through the
die after die attach is completed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Die Bonding
Die attach for these devices is made simple through
the use of surface mount die attach technology.
Mounting pads are conveniently located on the bottom
surface of these devices, and are opposite the active
junction. The devices are well suited for higher tem-
perature solder attachment onto hard substrates.
80Au/20Sn and Sn63/Pb37 solders are acceptable for
usage.
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
MA4E2508 Series
SURMOUNT
TM
Low, Medium, & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
MA4E2508L Low Barrier SPICE PARAMETERS (Per Diode)
4
Is
(nA)
26
M/A-COM Products
Rev. V3
Rs
(Ω)
12.8
N
1.20
Cj0
(pF)
1.0 E-2
M
0.5
Ik
(mA)
14
Cjpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
FC
0.5
BV
(V)
5.0
IBV
(mA)
1.0 E-2
MA4E2508M Medium Barrier SPICE PARAMETERS (Per Diode)
4
Is
(nA)
5.0 E-1
Rs
(Ω)
9.6
N
1.20
Cj0
(pF)
1.0 E-2
M
0.5
Ik
(mA)
10
Cpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
FC
0.5
BV
(V)
5.0
IBV
(mA)
1.0 E-2
MA4E2508H High Barrier SPICE PARAMETERS
Is
(nA)
5.7 E-2
Rs
(Ω)
6.5
N
1.20
Cj0
(pF)
1.0 E-2
M
0.5
Ik
(mA)
4
Cpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
FC
0.5
BV
(V)
5.0
IBV
(mA)
1.0 E-2
4. Spice parameters (Per Diode) are based on the MA4E2502 Series datasheet.
Circuit Mounting Dimensions (Inches)
0.020
0.020
0.020
0.020
0.013
Ordering Information
Part Number
MA4E2508L-1112W
MA4E2508L-1112
MA4E2508L-1112T
MA4E2508M-1112W
MA4E2508M-1112
MA4E2508MSP-T
MA4E2508H-1112W
MA4E2508H-1112
MADS-002508-1112HT
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Packaging
Wafer on Frame
Die in Carrier
Tape/Reel
Wafer on Frame
Die in Carrier
Tape/Reel
Wafer on Frame
Die in Carrier
Tape/Reel
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E2508 Series
SURMOUNT
TM
Low, Medium, & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
MA4E2508 Schematic Per Diode
Ct
M/A-COM Products
Rev. V3
Ls
Rs
Rj
Schematic Values per Diode
Model Number
MA4E2508L
MA4E2508M
MA4E2508H
Ls (nH)
0.8
0.8
0.8
Rs (Ω)
12.8
9.6
6.5
Rj (Ω)
26 / Idc (mA)
26 / Idc (mA)
26 / Idc (mA)
Ct (pF)
0.09
0.09
0.09
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
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