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MA4E2508M-1112W

Description
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size94KB,4 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric Compare View All

MA4E2508M-1112W Overview

SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE

MA4E2508M-1112W Parametric

Parameter NameAttribute value
MakerMACOM
package instructionR-XBCC-N2
Contacts2
Manufacturer packaging codeCASE 1112
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationCOMMON BIPOLAR TERMINAL, 2 ELEMENTS
Maximum diode capacitance0.24 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandKU BAND
JESD-30 codeR-XBCC-N2
Number of components2
Number of terminals2
Maximum operating frequency18 GHz
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Maximum power dissipation0.05 W
Pulse input maximum power0.1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
Schottky barrier typeMEDIUM BARRIER
MA4E2508 Series
SURMOUNT
TM
Low, Medium, & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
Features
Extremely Low Parasitic Capitance & Induc-
tance
Surface Mountable in Microwave Circuits, No
Wirebonds Required
Rugged HMIC Construction with polyimide
Scratch Protection
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100 % Stabilization Bake (300°C, 16
hours)
Lower Susceptibility to ESD Damage
M/A-COM Products
Rev. V3
Case Style 1112
A
B
Description
The MA4E2508 SURMOUNT
TM
Anti-Parallel Diode
Series are Silicon Low, Medium, & High Barrier
Schottky Devices fabricated with the patented Het-
erolithic Microwave Integrated Circuit (HMIC) proc-
ess. HMIC circuits consist of Silicon pedestals
which form diodes or via conductors embedded in
a glass dielectric, which acts as the low dispersion,
low loss, microstrip transmission medium. The
combination of silicon and glass allows HMIC de-
vices to have excellent loss and power dissipation
characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior me-
chanical performance of a chip. The SurMount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic dis-
charge than conventional beam lead Schottky di-
odes.
The multi-layer metalization employed in the fabri-
cation of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all de-
vices to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0502” outline allows for Surface Mount place-
ment and multi- functional polarity orientations.
C
D
E
D
Case Style 1112
DIM
A
B
C
D Sq.
E
INCHES
MIN.
0.0445
0.0169
0.0040
0.0128
0.0128
MILLIMETERS
MIN.
1.130
0.430
0.102
0.325
0.325
MAX.
0.0465
0.0189
0.0080
0.0148
0.0148
MAX.
1.180
0.480
0.203
0.375
0.375
Equivalent Circuit
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.

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Description SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE Mixer Diode SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE Mixer Diode SILICON, KU BAND, MIXER DIODE
Maker MACOM - MACOM - MACOM MACOM MACOM MACOM - MACOM
package instruction R-XBCC-N2 - R-XBCC-N2 - R-XBCC-N2 R-LUMW-N2 R-XBCC-N2 R-XBCC-N2 - R-XBCC-N2
Contacts 2 - 2 - 2 - 2 2 - 2
Manufacturer packaging code CASE 1112 - CASE 1112 - CASE 1112 - CASE 1112 CASE 1112 - CASE 1112
Reach Compliance Code compli - compli - compli compli compli compli - compli
ECCN code EAR99 - EAR99 - EAR99 EAR99 EAR99 EAR99 - EAR99
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