BC192 datasheet, PDF - EEWORLD Datasheet

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BC192: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18; CategoryDiscrete semiconductor The transistor; File Size430KB，4 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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BC192 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18

BC192 Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.4 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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BC192 Related Products

	BC192	BC250	BC186	BC114	BC208	BC187	BC224	BC148	BC113	BC157
Description	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18	Transistor,	Transistor,	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18	Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Transistor,	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-MBCY-W3	,	,	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	,	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Configuration	SINGLE	SINGLE	SINGLE	Single	Single	SINGLE	SINGLE	SINGLE	Single	SINGLE
Maximum operating temperature	175 °C	125 °C	175 °C	125 °C	125 °C	175 °C	150 °C	125 °C	125 °C	125 °C
Polarity/channel type	PNP	PNP	PNP	NPN	NPN	PNP	PNP	NPN	NPN	PNP
Maximum power dissipation(Abs)	0.4 W	0.2 W	0.3 W	0.2 W	0.2 W	0.3 W	0.25 W	0.35 W	0.2 W	0.35 W
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Nominal transition frequency (fT)	100 MHz	100 MHz	50 MHz	70 MHz	200 MHz	150 MHz	150 MHz	200 MHz	60 MHz	150 MHz
ECCN code	EAR99	EAR99	EAR99	-	-	EAR99	EAR99	EAR99	-	EAR99
Maximum collector current (IC)	0.5 A	0.1 A	0.1 A	-	0.1 A	0.1 A	0.03 A	0.1 A	-	0.1 A
Collector-emitter maximum voltage	25 V	20 V	25 V	-	-	25 V	30 V	20 V	-	45 V
Minimum DC current gain (hFE)	60	35	40	200	-	100	150	110	200	110
JEDEC-95 code	TO-18	TO-92	TO-18	-	-	TO-18	TO-92	TO-92	-	TO-92
JESD-30 code	O-MBCY-W3	O-PBCY-W3	O-MBCY-W3	-	-	O-MBCY-W3	O-PBCY-W3	O-PBCY-W3	-	O-PBCY-W3
Number of components	1	1	1	-	-	1	1	1	-	1
Number of terminals	3	3	3	-	-	3	3	3	-	3
Package body material	METAL	PLASTIC/EPOXY	METAL	-	-	METAL	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	-	-	ROUND	ROUND	ROUND	-	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL
Certification status	Not Qualified	Not Qualified	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
Terminal form	WIRE	WIRE	WIRE	-	-	WIRE	WIRE	WIRE	-	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	-	-	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	-	-	SILICON	SILICON	SILICON	-	SILICON
Maker	-	Micro Electronics	Micro Electronics	-	Micro Electronics	Micro Electronics	Micro Electronics	Micro Electronics	Micro Electronics	Micro Electronics

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