BC113 datasheet, PDF - EEWORLD Datasheet

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BC113: DescriptionTransistor,; CategoryDiscrete semiconductor The transistor; File Size430KB，4 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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BC113 Overview

Transistor,

BC113 Parametric

Parameter Name	Attribute value
Maker	Micro Electronics
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Minimum DC current gain (hFE)	200
Maximum operating temperature	125 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
surface mount	NO
Nominal transition frequency (fT)	60 MHz

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	BC113	BC250	BC186	BC114	BC192	BC208	BC187	BC224	BC148	BC157
Description	Transistor,	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18	Transistor,	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18	Transistor,	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18	Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
package instruction	,	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-MBCY-W3	,	CYLINDRICAL, O-MBCY-W3	,	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Configuration	Single	SINGLE	SINGLE	Single	SINGLE	Single	SINGLE	SINGLE	SINGLE	SINGLE
Maximum operating temperature	125 °C	125 °C	175 °C	125 °C	175 °C	125 °C	175 °C	150 °C	125 °C	125 °C
Polarity/channel type	NPN	PNP	PNP	NPN	PNP	NPN	PNP	PNP	NPN	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.3 W	0.2 W	0.4 W	0.2 W	0.3 W	0.25 W	0.35 W	0.35 W
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Nominal transition frequency (fT)	60 MHz	100 MHz	50 MHz	70 MHz	100 MHz	200 MHz	150 MHz	150 MHz	200 MHz	150 MHz
Maker	Micro Electronics	Micro Electronics	Micro Electronics	-	-	Micro Electronics	Micro Electronics	Micro Electronics	Micro Electronics	Micro Electronics
Minimum DC current gain (hFE)	200	35	40	200	60	-	100	150	110	110
ECCN code	-	EAR99	EAR99	-	EAR99	-	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	-	0.1 A	0.1 A	-	0.5 A	0.1 A	0.1 A	0.03 A	0.1 A	0.1 A
Collector-emitter maximum voltage	-	20 V	25 V	-	25 V	-	25 V	30 V	20 V	45 V
JEDEC-95 code	-	TO-92	TO-18	-	TO-18	-	TO-18	TO-92	TO-92	TO-92
JESD-30 code	-	O-PBCY-W3	O-MBCY-W3	-	O-MBCY-W3	-	O-MBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	-	1	1	-	1	-	1	1	1	1
Number of terminals	-	3	3	-	3	-	3	3	3	3
Package body material	-	PLASTIC/EPOXY	METAL	-	METAL	-	METAL	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	ROUND	ROUND	-	ROUND	-	ROUND	ROUND	ROUND	ROUND
Package form	-	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Certification status	-	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Terminal form	-	WIRE	WIRE	-	WIRE	-	WIRE	WIRE	WIRE	WIRE
Terminal location	-	BOTTOM	BOTTOM	-	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	-	AMPLIFIER	AMPLIFIER	-	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	-	SILICON	SILICON	-	SILICON	-	SILICON	SILICON	SILICON	SILICON

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