Philips Semiconductors
Product specification
16-bit D-type flip-flop; positive-edge trigger
(3-State)
74ABT16374B
74ABTH16374B
FEATURES
•
Two 8-bit positive edge triggered registers
•
Live insertion/extraction permitted
•
Power-up 3-State
•
Power-up reset
•
Multiple V
CC
and GND pins minimize switching noise
•
3-State output buffers
•
74ABTH16373B incorporates bus-hold data inputs which
eliminate the need for external pull-up resistors to hold unused
inputs
DESCRIPTION
The 74ABT16374B high-performance BiCMOS device combines
low static and dynamic power dissipation with high speed and high
output drive.
The 74ABT16374B has two 8-bit, edge triggered registers, with each
register coupled to eight 3-State output buffers. The two sections of
each register are controlled independently by the clock (nCP) and
Output Enable (nOE) control gates.
Each register is fully edge triggered. The state of each D input, one
set-up time before the Low-to-High clock transition, is transferred to
the corresponding flip-flop’s Q output.
The 3-State output buffers are designed to drive heavily loaded
3-State buses, MOS memories, or MOS microprocessors. Each
active-Low Output Enable (nOE) controls all eight 3-State buffers for
its register independent of the clock operation.
When nOE is Low, the stored data appears at the outputs for that
register. When nOE is High, the outputs for that register are in the
High-impedance “OFF” state, which means they will neither drive
nor load the bus.
Two options are available, 74ABT16374B which does not have the
bus-hold feature and 74ABTH16374B which incorporates the
bus-hold feature.
CONDITIONS
T
amb
= 25°C; GND = 0V
C
L
= 50pF; V
CC
= 5V
V
I
= 0V or V
CC
V
O
= 0V or V
CC
; 3-State
Outputs disabled; V
CC
= 5.5V
Outputs Low; V
CC
= 5.5V
OUTSIDE NORTH AMERICA
74ABT16374B DL
74ABT16374B DGG
74ABTH16374B DL
74ABTH16374B DGG
NORTH AMERICA
BT16374B DL
BT16374B DGG
BH16374B DL
BH16374B DGG
•
Bus-hold data inputs eliminate the need for external pull-up
resistors to hold unused inputs
•
Output capability: +64mA/–32mA
•
Latch-up protection exceeds 500mA per JEDEC Std 17
•
ESD protection exceeds 2000V per MIL STD 883 Method 3015
and 200V per Machine Model
QUICK REFERENCE DATA
SYMBOL
t
PLH
t
PHL
C
IN
C
OUT
I
CCZ
I
CCL
Propagation delay
nCP to nQx
Input capacitance
Output capacitance
Quiescent supply current
su ly
PARAMETER
TYPICAL
2.6
2.2
4
7
500
8
UNIT
ns
pF
pF
µA
mA
ORDERING INFORMATION
PACKAGES
48-Pin Plastic SSOP Type III
48-Pin Plastic TSSOP Type II
48-Pin Plastic SSOP Type III
48-Pin Plastic TSSOP Type II
TEMPERATURE RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
DWG NUMBER
SOT370-1
SOT362-1
SOT370-1
SOT362-1
PIN DESCRIPTION
PIN NUMBER
47, 46, 44, 43, 41, 40, 38, 37
36, 35, 33, 32, 30, 29, 27, 26
2, 3, 5, 6, 8, 9, 11, 12
13, 14, 16, 17, 19, 20, 22, 23
1, 24
48, 25
4, 10, 15, 21, 28, 34, 39, 45
7, 18, 31, 42
SYMBOL
1D0 – 1D7
2D0 – 2D7
1Q0 – 1Q7
2Q0 – 2Q7
1OE, 2OE
1CP, 2CP
GND
V
CC
FUNCTION
LOGIC SYMBOL
47
46
44
43
41
40
38
37
Data inputs
1D0 1D1 1D2 1D3 1D4 1D5 1D6 1D7
Data outputs
Output enable
inputs (active-Low)
Clock pulse inputs
(active rising edge)
Ground (0V)
Positive supply
voltage
48
1
1CP
1OE
1Q0 1Q1 1Q2 1Q3 1Q4 1Q5 1Q6 1Q7
2
36
3
35
5
33
6
32
8
30
9
29
11
27
12
26
2D0 2D21 2D2 2D3 2D4 2D5 2D6 2D7
25
24
2CP
2OE
2Q0 2Q1 2Q2 2Q3 2Q4 2Q5 2Q6 2Q7
13
14
16
17
19
20
22
23
SH00078
1998 Feb 27
2
853-1752 19027
Philips Semiconductors
Product specification
16-bit D-type flip-flop; positive-edge trigger
(3-State)
74ABT16374B
74ABTH16374B
FUNCTION TABLE
INPUTS
nOE
L
L
L
H
H
H =
h =
L =
l =
NC=
X =
Z =
↑
=
↑
=
nCP
↑
↑
↑
↑
↑
nDx
l
h
X
X
nDx
INTERNAL
REGISTER
L
H
NC
NC
nDx
OUTPUTS
OPERATING MODE
nQ0 – nQ7
L
H
NC
Z
Z
Load and read register
Hold
Disable outputs
High voltage level
High voltage level one set-up time prior to the High-to-Low E transition
Low voltage level
Low voltage level one set-up time prior to the High-to-Low E transition
No change
Don’t care
High impedance “off” state
Low-to-High clock transition
Not a Low-to-High clock transition
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
V
CC
I
IK
V
I
I
OK
V
OUT
I
O
OUT
T
stg
PARAMETER
DC supply voltage
DC input diode current
DC input voltage
3
DC output diode current
DC output voltage
3
DC output current
output in High state
Storage temperature range
–64
–65 to 150
°C
V
O
< 0
output in Off or High state
output in Low state
V
I
< 0
CONDITIONS
RATING
–0.5 to +7.0
–18
–1.2 to +7.0
–50
–0.5 to +5.5
128
mA
UNIT
V
mA
V
mA
V
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
LIMITS
SYMBOL
V
CC
V
I
V
IH
V
IL
I
OH
I
OL
∆t/∆v
T
amb
DC supply voltage
Input voltage
High-level input voltage
Low-level Input voltage
High-level output current
Low-level output current
Input transition rise or fall rate
Operating free-air temperature range
0
–40
PARAMETER
MIN
4.5
0
2.0
0.8
–32
64
10
+85
MAX
5.5
V
CC
UNIT
V
V
V
V
mA
mA
ns/V
°C
1998 Feb 27
4
Philips Semiconductors
Product specification
16-bit D-type flip-flop; positive-edge trigger
(3-State)
74ABT16374B
74ABTH16374B
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
T
amb
= +25°C
MIN
V
IK
V
OH
V
OL
V
RST
I
I
Input clamp voltage
V
CC
= 4.5V; I
IK
= –18mA
V
CC
= 4.5V; I
OH
= –3mA; V
I
= V
IL
or V
IH
High-level output voltage
V
CC
= 5.0V; I
OH
= –3mA; V
I
= V
IL
or V
IH
V
CC
= 4.5V; I
OH
= –32mA; V
I
= V
IL
or V
IH
Low-level output voltage
Power-up output voltage
3
Input leakage current
g
74ABT16374B
V
CC
= 4.5V; I
OL
= 64mA; V
I
= V
IL
or V
IH
V
CC
= 5.5V; I
O
= 1mA; V
I
= GND or V
CC
V
CC
= 5 5V; V
I
= V
CC
or GND
5.5V;
V
CC
= 5.5V; V
I
= V
CC
or
GND
V
CC
= 5.5V; V
I
= V
CC
V
CC
= 5.5V; V
I
= 0
I
HOLD
I
OFF
I
PU/PD
I
OZH
I
OZL
I
CEX
I
O
I
CCH
I
CCL
I
CCZ
∆I
CC
Additional supply current
per input pin
2
74ABT16374B
Additional supply current
per input pin
2
74ABTH16374B
Quiescent supply current
Bus Hold
B H ld current i
t inputs
6
t
74ABTH16374B
Power-off leakage current
Power-up/down 3-State
output current
4
3-State output High current
3-State output Low current
Output current
1
V
CC
= 4.5V; V
I
= 0.8V
V
CC
= 4.5V; V
I
= 2.0V
V
CC
= 5.5V; V
I
= 0 to 5.5V
V
CC
= 0.0V; V
O
or V
I
≤
4.5V
V
CC
= 2.1V; V
O
= 0.5V;
V
I
= GND or V
CC
; V
OE
= GND
V
CC
= 5.5V; V
O
= 2.7V; V
I
= V
IL
or V
IH
V
CC
= 5.5V; V
O
= 0.5V; V
I
= V
IL
or V
IH
V
CC
= 5.5V; V
O
= 2.5V
V
CC
= 5.5V; Outputs High, V
I
= GND or V
CC
V
CC
= 5.5V; Outputs Low, V
I
= GND or V
CC
V
CC
= 5.5V; Outputs 3-State;
V
I
= GND or V
CC
V
CC
= 5.5V; one input at 3.4V, other inputs at
V
CC
or GND
V
CC
= 5.5V; one input at 3.4V, other inputs at
V
CC
or GND
–50
Control pins
Data
pins
5
50
–75
±800
±5.0
±5.0
0.5
–0.5
5.0
–70
0.5
8
0.5
±100
±50
10
–10
50
–180
2
19
2
–50
±100
±50
10
–10
50
–180
2
19
2
µA
µA
µA
µA
µA
mA
mA
mA
mA
µA
2.5
3.0
2.0
TYP
–0.9
2.9
3.4
2.4
0.42
0.13
0 01
0.01
±0.01
0.01
–1
0.55
0.55
±1
±1
1
–3
50
–75
µA
MAX
–1.2
2.5
3.0
2.0
0.55
0.55
±1
±1
1
–5
µA
V
V
µ
µA
V
T
amb
= –40°C
to +85°C
MIN
MAX
–1.2
V
UNIT
I
I
Input leakage current
In ut
74ABTH16374B
Output High leakage current V
CC
= 5.5V; V
O
= 5.5V; V
I
= GND or V
CC
5
100
100
∆I
CC
0.5
1.5
1.5
mA
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.
4. This parameter is valid for any V
CC
between 0V and 2.1V with a transition time of up to 10msec. From V
CC
= 2.1V to V
CC
= 5V
±
10% a
transition time of up to 100µsec is permitted.
5. Unused pins at V
CC
or GND.
6. This is the bus hold overdrive current required to force the input to the opposite logic state.
1998 Feb 27
5
RF/Wirelessly
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