SILICON DUAL MATCHED
NPN TRANSISTORS
BFY81
•
•
•
•
Dual Silicon Matched Planar Transistors
Hermetic TO-77 (MO-002AF) Metal Package.
Ideally Suited For Differential And Low Level Dc Amplifiers
Screening Options Available.
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
One Side
45V
45V
6V
50mA
Both Sides
Total Power Dissipation at TA = 25°C
Derate Above 25°C
Total Power Dissipation at TC = 25°C
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
400mW
500mW
2.3mW/°C
2.9mW/°C
800mW
1.3W
4.6mW/°C
7.4mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJA
R
θJC
Parameters
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Case
One Side Max.
437
219
Both Sides Max. Units
350
135
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8502
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON DUAL MATCHED
NPN TRANSISTORS
BFY81
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated) Per Side
Symbols
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICEO
VCE(sat)
VBE(on)
(1)
(1)
(1)
Parameters
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter-Cut-Off Current
Collector-Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter On Voltage
Forward-current transfer
ratio
Test Conditions
IC = 10µA
IC = 10mA
IE = 10µA
VCB = 40V
IE = 0
IB = 0
IC = 0
IE = 0
TA = 150°C
VEB = 5V
VCE = 5V
IC = 1.0mA
IC = 100µA
IC = 10µA
IC = 0
IB = 0
IB = 0.1mA
VCE = 5V
VCE = 5V
VCE = 5V
VCE = 5V
Min.
45
45
6
Typ.
Max.
Units
V
10
10
10
10
0.35
0.7
60
100
150
nA
µA
nA
V
hFE
IC = 100µA
IC = 1.0mA
ELECTRICAL MATCHING CHARACTERISTICS
hFE1
hFE2
(2)
Forward-current transfer
ratio (gain ratio)
Base-Emitter Voltage
Differential
Base-Emitter Voltage
Differential Change Due
To Temperature
IC = 100
µ
A
IC = 100
µ
A
IC = 100
µ
A
VCE = 5V
VCE = 5V
VCE = 5V
0.8
1.0
10
25
mV
|VBE1-VBE2|
|
∆
(VBE1-VBE2)
∆
TA|
(3)
µ
V/°C
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-
current transfer ratio
Output Capacitance
IC = 500
µ
A
f = 30MHz
VCB = 5V
f = 1.0MHz
IC = 10
µ
A
f = 1.0KHz
VCE = 5V
IE = 0
6
pF
VCE = 5V
2
Cobo
NF
(3)
Noise Figure
4
dB
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
(2) The lower of the two readings is taken as hFE1
(3)
By design only, not a production test
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8502
Issue 1
Page 2 of 3
SILICON DUAL MATCHED
NPN TRANSISTORS
BFY81
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.335)
9.40 (0.370)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
1.02
(0.040)
Max.
12.7 (0.500)
Min.
0.41 (0.016)
0.53 (0.021)
5.08
(0.200)
2.54
(0.100)
2.54
(0.100)
3
2
4
5
6
1
0.74 (0.029)
1.14 (0.045)
45˚
0.71 (0.028)
0.86 (0.034)
TO-77 (MO-002AF)
Underside View
Pin 1
Collector 1
Pin 4
Emitter 2
Pin 2
Base 1
Pin 5
Base 2
Pin 3
Emitter 1
Pin 6
Collector 2
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8502
Issue 1
Page 3 of 3
Power technology
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