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BFY81.MOD

Description
Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-002AF, HERMETIC SEALED, METAL, TO-77, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size171KB,3 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
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BFY81.MOD Overview

Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-002AF, HERMETIC SEALED, METAL, TO-77, 6 PIN

BFY81.MOD Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionHERMETIC SEALED, METAL, TO-77, 6 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage45 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)150
JEDEC-95 codeMO-002AF
JESD-30 codeO-MBCY-W6
Number of components2
Number of terminals6
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
SILICON DUAL MATCHED
NPN TRANSISTORS
BFY81
Dual Silicon Matched Planar Transistors
Hermetic TO-77 (MO-002AF) Metal Package.
Ideally Suited For Differential And Low Level Dc Amplifiers
Screening Options Available.
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
One Side
45V
45V
6V
50mA
Both Sides
Total Power Dissipation at TA = 25°C
Derate Above 25°C
Total Power Dissipation at TC = 25°C
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
400mW
500mW
2.3mW/°C
2.9mW/°C
800mW
1.3W
4.6mW/°C
7.4mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJA
R
θJC
Parameters
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Case
One Side Max.
437
219
Both Sides Max. Units
350
135
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8502
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com

BFY81.MOD Related Products

BFY81.MOD BFY81 BFY81G4
Description Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-002AF, HERMETIC SEALED, METAL, TO-77, 6 PIN Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-002AF, HERMETIC SEALED, METAL, TO-77, 6 PIN Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-002AF, HERMETIC SEALED, METAL, TO-77, 6 PIN
Is it Rohs certified? conform to incompatible conform to
package instruction HERMETIC SEALED, METAL, TO-77, 6 PIN CYLINDRICAL, O-MBCY-W6 CYLINDRICAL, O-MBCY-W6
Reach Compliance Code compliant compliant compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A
Collector-emitter maximum voltage 45 V 45 V 45 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 150 150 150
JEDEC-95 code MO-002AF MO-002AF MO-002AF
JESD-30 code O-MBCY-W6 O-MBCY-W6 O-MBCY-W6
Number of components 2 2 2
Number of terminals 6 6 6
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 60 MHz 60 MHz 60 MHz
Maker TT Electronics plc - TT Electronics plc

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