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BSS124

Description
Small Signal Field-Effect Transistor, 0.12A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size77KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSS124 Overview

Small Signal Field-Effect Transistor, 0.12A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

BSS124 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)0.12 A
Maximum drain current (ID)0.12 A
Maximum drain-source on-resistance28 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)6 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
BSS 124
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
V
GS(th)
= 1.5 ...2.5 V
Pin 1
G
Type
BSS 124
Type
BSS 124
Pin 2
D
Marking
SS 124
Pin 3
S
V
DS
400 V
I
D
0.12 A
R
DS(on)
28
Package
TO-92
Ordering Code
Q67000-S172
Tape and Reel Information
E6288
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
Symbol
Values
400
400
Unit
V
V
DS
V
DGR
R
GS
= 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
V
GS
V
gs
I
D
±
14
±
20
A
0.12
T
A
= 37 °C
DC drain current, pulsed
I
Dpuls
0.48
T
A
= 25 °C
Power dissipation
P
tot
1
W
T
A
= 25 °C
Semiconductor Group
1
12/05/1997
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