BY251P thru BY255P
Vishay Semiconductors
General Purpose Plastic Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
j
max.
3.0 A
200 V to 1300 V
150 A
5.0 µA
1.1 V
150 °C
DO-201AD
Features
• Low forward voltage drop
• Low leakage current, I
R
less than 0.1 µA
• High forward surge capability
Mechanical Data
Case:
DO-201AD, molded plastic body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and MIL-STD-750, Method
2026
Polarity:
Color band denotes cathode end
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 10 mm lead length
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Maximum full load reverse current, full cycle average 10 mm
lead length
Operating junction and storage temperature range
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
T
J
, T
STG
BY251P BY252P BY253P BY254P BY255P
200
140
200
400
280
400
600
420
600
3.0
150
100
- 55 to + 150
800
560
800
1300
910
1300
Unit
V
V
V
A
A
µA
°C
Document Number 88838
28-Apr-05
www.vishay.com
1
BY251P thru BY255P
Vishay Semiconductors
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum instantaneous
forward voltage
Maximum reverse current at
rated DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
at 3.0 A
T
A
= 25 °C
I
F
= 0.5 A, I
R
= 1.0 V,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
Test condition
Symbol
V
F
I
R
t
rr
C
J
BY251P BY252P BY253P BY254P BY255P
1.1
5.0
3.0
40
Unit
V
µA
µs
pF
Thermal Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Typical thermal resistance
(1)
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Symbol
R
θJA
R
θJL
BY251P BY252P BY253P BY254P BY255P
20
10
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
4.0
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
200
60 Hz
Resistive or
Inductive Load
8.3ms Single Half Sine-Wave
3.0
100
T
A
= 55 °C
2.0
1.0
10mm lead length
0
0
25
50
75
100 125
Ambient Temperature, °C
150
175
10
1
10
Number of Cycles at 60Hz
100
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
www.vishay.com
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Document Number 88838
28-Apr-05
BY251P thru BY255P
Vishay Semiconductors
100
T
J
= 125 °C
Junction Capacitance (pF)
Instantaneous Reverse Leakage Current ( A)
10
T
J
= 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
1
T
J
= 75 °C
0.1
T
J
= 25 °C
0.01
0
40
80
60
100
20
Percent of Rated Peak Reverse Voltage (%)
10
1
10
Reverse Voltage (V)
100
Figure 3. Maximum Non-repetitive Peak Forward Surge Current
Figure 5. Typical Junction Capacitance
100
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse width = 300
µs
1% Duty Cycle
10
1
0.1
0.6
1.2
0.7
1.0
0.8
0.9
1.1
Instantaneous Forward Voltage (V)
1.3
Figure 4. Typical Instantaneous Forward Characteristics
Package outline dimensions in inches (millimeters)
DO-201AD
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Document Number 88838
28-Apr-05
www.vishay.com
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