CQ28C010-120 datasheet, PDF - EEWORLD Datasheet

CQ28C010-120: DescriptionEEPROM, 128KX8, 120ns, Parallel, CMOS, CDIP32; Categorystorage storage; File Size406KB，10 Pages; ManufacturerLSC/CSI; Websitehttps://lsicsi.com

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CQ28C010-120 Overview

EEPROM, 128KX8, 120ns, Parallel, CMOS, CDIP32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	DIP, DIP32,.6
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	120 ns
Other features	AUTOMATIC WRITE;PAGE WRITE;BULK ERASE
command user interface	NO
Data polling	YES
Durability	10000 Write/Erase Cycles
JESD-30 code	R-CDIP-T32
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE
page size	128 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum standby current	0.00085 A
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
Maximum write cycle time (tWC)	10 ms
Base Number Matches	1

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