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NAND16GW3C4BN1E

Description
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
Categorystorage    storage   
File Size1MB,60 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

NAND16GW3C4BN1E Overview

8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory

NAND16GW3C4BN1E Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeTSOP
package instructionTSOP1,
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time25 ns
JESD-30 codeR-PDSO-G48
length18.4 mm
memory density17179869184 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals48
word count2147483648 words
character code2000000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2GX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
typeMLC NAND TYPE
width12 mm
NAND08GW3C2B
NAND16GW3C4B
8 or 16 Gbit, 2112 byte page,
3 V supply, multilevel, multiplane, NAND Flash memory
Target Specification
Features
High density multilevel cell (MLC) Flash
memory
– Up to 16 Gbit memory array
– Up to 512 Mbit spare area
– Cost-effective solutions for mass storage
applications
NAND interface
– x8 bus width
– Multiplexed address/data
Supply voltage: V
DD
= 2.7 to 3.6 V
Page size: (2048 + 64 spare) bytes
Block size: (256K + 8K spare) bytes
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
Memory cell array:
(2 K + 64 ) bytes x 128 pages x 4096 blocks
Page read/program
– Random access: 60 µs (max)
– Sequential access: 25 ns (min)
– Page program operation time: 800 µs (typ)
Multipage program time (2 pages): 800 µs (typ)
Copy-back program
– Fast page copy
Fast block erase
– Block erase time: 2.5 ms (typ)
Multiblock erase time (2 blocks): 2.5 ms (typ)
Status register
Electronic signature
TSOP48 12 x 20 mm (N)
LGA52 12 x 17 mm (N)
Serial number option
Chip enable ‘don’t care’
Data protection
– Hardware program/erase locked during
power transitions
Development tools
– Error correction code models
– Bad block management and wear leveling
algorithm
– HW simulation models
Data integrity
– 10,000 program/erase cycles (with ECC)
– 10 years data retention
ECOPACK
®
packages available
March 2008
Rev 2
1/60
www.numonyx.com
1
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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