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DE375-102N10-00

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size114KB,1 Pages
ManufacturerDirected Energy Inc
Download Datasheet Parametric Compare View All

DE375-102N10-00 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

DE375-102N10-00 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)10 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)340 W
surface mountYES
Base Number Matches1

DE375-102N10-00 Related Products

DE375-102N10-00 DE275-501N16-00 DE150-201N09-00 DE275-201N25-00
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Reach Compliance Code unknown unknown unknown unknown
Configuration Single Single Single Single
Maximum drain current (Abs) (ID) 10 A 16 A 9 A 25 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 340 W 270 W 80 W 270 W
surface mount YES YES YES YES
Base Number Matches 1 1 1 -
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