技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DD800S17K6C_B2
初步数据
PreliminaryData
V
RRM
I
F
I
FRM
I²t
min.
I
F
= 800 A, V
GE
= 0 V
I
F
= 800 A, V
GE
= 0 V
T
vj
= 25°C
T
vj
= 125°C
V
F
I
RM
1700
800
1600
170
typ.
2,10
2,10
710
860
135
265
75,0
155
max.
2,50
2,50
V
V
A
A
µC
µC
mJ
mJ
V
A
A
kA²s
二极管,逆变器/Diode,Inverter
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
最大额定值/MaximumRatedValues
T
vj
= 25°C
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗(每脉冲)
Reverserecoveryenergy
结-外壳热阻
Thermalresistance,junctiontocase
在开关状态下温度
Temperatureunderswitchingconditions
I
F
= 800 A, - di
F
/dt = 6300 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 900 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 800 A, - di
F
/dt = 6300 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 900 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 800 A, - di
F
/dt = 6300 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 900 V
T
vj
= 125°C
V
GE
= -15 V
每个二极管/perdiode
Q
r
E
rec
R
thJC
T
vj op
-40
34,0 K/kW
125
°C
模块/Module
绝缘测试电压
Isolationtestvoltage
内部绝缘
Internalisolation
爬电距离
Creepagedistance
电气间隙
Clearance
相对电痕指数
Comperativetrackingindex
外壳-散热器热阻
Thermalresistance,casetoheatsink
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
端子联接扭距
Terminalconnectiontorque
RMS, f = 50 Hz, t = 1 min.
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
每个模块/permodule
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
T
C
=25°C,每个开关/perswitch
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
dateofpublication:2013-11-25
revision:2.0
1
V
ISOL
CTI
min.
R
thCH
L
sCE
R
CC'+EE'
T
stg
M
-40
4,25
1,8
M
8,0
G
-
1050
10
Nm
g
4,0
AIN
15,0
10,0
> 275
typ.
8,00
20
0,16
-
-
125
5,75
2,1
max.
K/kW
nH
mΩ
°C
Nm
Nm
kV
mm
mm
重量
Weight
preparedby:KHH
approvedby:PL
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DD800S17K6C_B2
初步数据
PreliminaryData
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
Z
thJC
=f(t)
100
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
I
F
=f(V
F
)
1600
1440
1280
1120
960
I
F
[A]
800
640
480
320
160
0
T
vj
= 25°C
T
vj
= 125°C
Z
thJC
: Diode
Z
thJC
[K/kW]
10
i:
1
2
3
4
r
i
[K/kW]: 15,7
7,05
2,24 9,05
τ
i
[s]:
0,0287 0,0705 0,153 0,988
0,0
0,5
1,0
1,5
V
F
[V]
2,0
2,5
3,0
1
0,001
0,01
0,1
t [s]
1
10
100
preparedby:KHH
approvedby:PL
dateofpublication:2013-11-25
revision:2.0
2
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DD800S17K6C_B2
初步数据
PreliminaryData
½用条件和条款
½用条件和条款
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Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
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Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
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note,thatforanysuchapplicationsweurgentlyrecommend
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preparedby:KHH
approvedby:PL
dateofpublication:2013-11-25
revision:2.0
4