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DD800S17K6CB2NOSA1

Description
Rectifier Diode, 1 Phase, 2 Element, 800A, 1700V V(RRM), Silicon, MODULE-4
CategoryDiscrete semiconductor    diode   
File Size409KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

DD800S17K6CB2NOSA1 Overview

Rectifier Diode, 1 Phase, 2 Element, 800A, 1700V V(RRM), Silicon, MODULE-4

DD800S17K6CB2NOSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionR-XUFM-X4
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.5 V
JESD-30 codeR-XUFM-X4
Number of components2
Phase1
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current800 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineIEC-61140
Maximum repetitive peak reverse voltage1700 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DD800S17K6C_B2
初步数据
PreliminaryData
V
RRM

I
F
I
FRM
I²t



min.
I
F
= 800 A, V
GE
= 0 V
I
F
= 800 A, V
GE
= 0 V
T
vj
= 25°C
T
vj
= 125°C
V
F
I
RM

1700
800
1600
170
typ.
2,10
2,10
710
860
135
265
75,0
155


max.
2,50
2,50

V
V
A
A
µC
µC
mJ
mJ

V

A

A

kA²s
二极管,逆变器/Diode,Inverter
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
最大额定值/MaximumRatedValues
T
vj
= 25°C

t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗(每脉冲)
Reverserecoveryenergy
结-外壳热阻
Thermalresistance,junctiontocase
在开关状态下温度
Temperatureunderswitchingconditions
I
F
= 800 A, - di
F
/dt = 6300 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 900 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 800 A, - di
F
/dt = 6300 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 900 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 800 A, - di
F
/dt = 6300 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 900 V
T
vj
= 125°C
V
GE
= -15 V
每个二极管/perdiode

Q
r


E
rec
R
thJC
T
vj op


-40

34,0 K/kW
125
°C
模块/Module
绝缘测试电压
Isolationtestvoltage
内部绝缘
Internalisolation
爬电距离
Creepagedistance
电气间隙
Clearance
相对电痕指数
Comperativetrackingindex
外壳-散热器热阻
Thermalresistance,casetoheatsink
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
端子联接扭距
Terminalconnectiontorque
RMS, f = 50 Hz, t = 1 min.
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal

每个模块/permodule
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)

T
C
=25°C,每个开关/perswitch

螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote

dateofpublication:2013-11-25
revision:2.0
1
V
ISOL




CTI




min.
R
thCH
L
sCE
R
CC'+EE'
T
stg
M



-40
4,25
1,8
M
8,0
G

-
1050
10

Nm
g
4,0
AIN
15,0
10,0
> 275
typ.
8,00
20
0,16

-
-


125
5,75
2,1
max.
K/kW
nH
mΩ
°C
Nm
Nm

kV



mm

mm


重量
Weight
preparedby:KHH
approvedby:PL

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