EEWORLDEEWORLDEEWORLD

Part Number

Search

D650S14TQR

Description
Rectifier Diode, 1 Phase, 1 Element, 960A, 1400V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size143KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

D650S14TQR Overview

Rectifier Diode, 1 Phase, 1 Element, 960A, 1400V V(RRM), Silicon,

D650S14TQR Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
ECCN codeEAR99
applicationFAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.25 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current10100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current960 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Maximum repetitive peak reverse voltage1400 V
Maximum reverse current20000 µA
Maximum reverse recovery time5.3 µs
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Base Number Matches1
S
Schnelle Diode
Fast Diode
Datenblatt / Data sheet
D650S
T
vj
= -40°C... T
vj max
V
RRM
I
FRMSM
T
C
= 100°C
T
C
= 55 °C,
θ
= 180°sin, t
P
= 10 ms
I
FAVM
I
FAVM
I
FRMS
T
vj
=
+
25°C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
=
+
25°C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FSM
I²t
1200 V
1400 V
1400 A
620 A
960 A
1510 A
12200 A
10100 A
744,2 A²s
510,05 A²s
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Kenndaten
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Spitzenwert der Durchlaßverzögerungsspannung
peak value of forward recovery voltage
Durchlaßverzögerungszeit
forward recovery time
Sperrstrom
reverse current
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Sperrverzögerungszeit
reverse recovery time
Elektrische Eigenschaften
T
vj
= T
vj max
, i
F
= 2700 A
T
vj
= T
vj max
T
vj
= T
vj max
IEC 747-2
T
vj
= T
vj max
, i
FM
= 2700 A,
di
F
/dt = 50 A/µs
IEC 747-2, Methode / Method II
i
FM
= di
F
/dt · t
fr
= 2700 A
T
vj
= T
vj max
, di
F
/dt = 50 A/µs
T
vj
= +25°C
T
vj
= T
vj max
, v
R
= V
RRM
IEC 747-2, T
vj
= T
vj max
i
FM
= 900A, -di
F
/dt = 50 A/µs
v
R
0,5V
RRM
, v
RM
= 0,8V
RRM
IEC 747-2, T
vj
= T
vj max
i
FM
= 900 A, -di
F
/dt = 50 A/µs
v
R
0,5V
RRM
, v
RM
= 0,8V
RRM
IEC 747-2, T
vj
= T
vj max
i
FM
= 900 A, -di
F
/dt = 50 A/µs
v
R
0,5V
RRM
, v
RM
= 0,8V
RRM
v
F
V
(TO)
r
T
V
FRM
max.
2,25 V
1,0 V
0,45 mΩ
2,9 V
t
fr
5 µs
i
R
I
RM
max.
20 mA
200 mA
122 A
Q
r
370 µAs
t
rr
5,3 µs
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication:
revision:
2009-03-16
1.0
IFBIP D AEC / 2009-03-16, H.Sandmann
Seite / page A 14/92
A 15/09
Seite/page
1/6

D650S14TQR Related Products

D650S14TQR D650S12TXPSA1 D650S14TXPSA1 D650S14TQRXPSA1 D650S12T D650S14TQRHOSA1
Description Rectifier Diode, 1 Phase, 1 Element, 960A, 1400V V(RRM), Silicon, DIODE GEN PURP 1.2KV 620A DIODE GEN PURP 1.4KV 620A DIODE GEN PURP 1.4KV 620A Rectifier Diode, 1 Element, 620A, 1200V V(RRM), Rectifier Diode,
Reach Compliance Code compliant compliant compliant compliant compliant compliant
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Base Number Matches 1 1 1 1 1 1
application FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY - -
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE -
Diode component materials SILICON SILICON SILICON SILICON - -
Maximum forward voltage (VF) 2.25 V 2.25 V 2.25 V 2.25 V 2.25 V -
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 - -
Maximum non-repetitive peak forward current 10100 A 10100 A 10100 A 10100 A 12200 A -
Number of components 1 1 1 1 1 -
Phase 1 1 1 1 - -
Number of terminals 2 2 2 2 - -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C -
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C - -
Maximum output current 960 A 620 A 620 A 620 A 620 A -
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - -
Package shape ROUND ROUND ROUND ROUND - -
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON - -
Maximum repetitive peak reverse voltage 1400 V 1200 V 1400 V 1400 V 1200 V -
Maximum reverse current 20000 µA 20000 µA 20000 µA 20000 µA - -
Maximum reverse recovery time 5.3 µs 5.3 µs 5.3 µs 5.3 µs 5.3 µs -
surface mount YES YES YES YES - -
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD - -
Terminal location END END END END - -
Is it Rohs certified? - conform to conform to conform to conform to -
Sampling of input data at irregular times
I would like to ask how to sample data that is input at an uncertain time. For example, in a serial sequence detector, the first data is manually input one second after reset, the second data is input...
渐渐 FPGA/CPLD
For video acquisition, use arm or blackfin
I am a newbie among newbies, and I would like to use Linux. Which one is easier?...
岚裳 ARM Technology
Are you in an empty nest period or a busy period at the end of the year?
[size=4]It’s the end of the year and I’m so busy, following up with customers and chasing orders, and there are a lot of things to do. Is it okay to be so busy? [/size]...
yijindz Talking about work
Show the WEBENCH design process + external synchronous DC-DC circuit design
Use WEBENCH to design a DC-DC circuit that can be externally synchronized, so that it is convenient to use external signals for synchronization during use:...
hanskying666 Analogue and Mixed Signal
DSP
...
sdjntl DSP and ARM Processors
Start designing a test instrument using LM3S8962 today
Requirements: 1. Use the I2C interface to sample three ADs with I2C interfaces; 2. Use the SSI interface to perform digital-to-analog conversion on one DAC. 3. Use the USB port to receive data from th...
eeleader Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1071  1009  1756  148  2708  22  21  36  3  55 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号