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D650S12T

Description
Rectifier Diode, 1 Element, 620A, 1200V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size143KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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D650S12T Overview

Rectifier Diode, 1 Element, 620A, 1200V V(RRM),

D650S12T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.25 V
Humidity sensitivity level1
Maximum non-repetitive peak forward current12200 A
Number of components1
Maximum operating temperature150 °C
Maximum output current620 A
Maximum repetitive peak reverse voltage1200 V
Maximum reverse recovery time5.3 µs
Base Number Matches1
S
Schnelle Diode
Fast Diode
Datenblatt / Data sheet
D650S
T
vj
= -40°C... T
vj max
V
RRM
I
FRMSM
T
C
= 100°C
T
C
= 55 °C,
θ
= 180°sin, t
P
= 10 ms
I
FAVM
I
FAVM
I
FRMS
T
vj
=
+
25°C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
=
+
25°C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FSM
I²t
1200 V
1400 V
1400 A
620 A
960 A
1510 A
12200 A
10100 A
744,2 A²s
510,05 A²s
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Kenndaten
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Spitzenwert der Durchlaßverzögerungsspannung
peak value of forward recovery voltage
Durchlaßverzögerungszeit
forward recovery time
Sperrstrom
reverse current
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Sperrverzögerungszeit
reverse recovery time
Elektrische Eigenschaften
T
vj
= T
vj max
, i
F
= 2700 A
T
vj
= T
vj max
T
vj
= T
vj max
IEC 747-2
T
vj
= T
vj max
, i
FM
= 2700 A,
di
F
/dt = 50 A/µs
IEC 747-2, Methode / Method II
i
FM
= di
F
/dt · t
fr
= 2700 A
T
vj
= T
vj max
, di
F
/dt = 50 A/µs
T
vj
= +25°C
T
vj
= T
vj max
, v
R
= V
RRM
IEC 747-2, T
vj
= T
vj max
i
FM
= 900A, -di
F
/dt = 50 A/µs
v
R
0,5V
RRM
, v
RM
= 0,8V
RRM
IEC 747-2, T
vj
= T
vj max
i
FM
= 900 A, -di
F
/dt = 50 A/µs
v
R
0,5V
RRM
, v
RM
= 0,8V
RRM
IEC 747-2, T
vj
= T
vj max
i
FM
= 900 A, -di
F
/dt = 50 A/µs
v
R
0,5V
RRM
, v
RM
= 0,8V
RRM
v
F
V
(TO)
r
T
V
FRM
max.
2,25 V
1,0 V
0,45 mΩ
2,9 V
t
fr
5 µs
i
R
I
RM
max.
20 mA
200 mA
122 A
Q
r
370 µAs
t
rr
5,3 µs
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication:
revision:
2009-03-16
1.0
IFBIP D AEC / 2009-03-16, H.Sandmann
Seite / page A 14/92
A 15/09
Seite/page
1/6

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Description Rectifier Diode, 1 Element, 620A, 1200V V(RRM), DIODE GEN PURP 1.2KV 620A DIODE GEN PURP 1.4KV 620A DIODE GEN PURP 1.4KV 620A Rectifier Diode, Rectifier Diode, 1 Phase, 1 Element, 960A, 1400V V(RRM), Silicon,
Reach Compliance Code compliant compliant compliant compliant compliant compliant
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Base Number Matches 1 1 1 1 1 1
Is it Rohs certified? conform to conform to conform to conform to - -
Configuration SINGLE SINGLE SINGLE SINGLE - SINGLE
Maximum forward voltage (VF) 2.25 V 2.25 V 2.25 V 2.25 V - 2.25 V
Maximum non-repetitive peak forward current 12200 A 10100 A 10100 A 10100 A - 10100 A
Number of components 1 1 1 1 - 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C - 150 °C
Maximum output current 620 A 620 A 620 A 620 A - 960 A
Maximum repetitive peak reverse voltage 1200 V 1200 V 1400 V 1400 V - 1400 V
Maximum reverse recovery time 5.3 µs 5.3 µs 5.3 µs 5.3 µs - 5.3 µs
application - FAST RECOVERY FAST RECOVERY FAST RECOVERY - FAST RECOVERY
Diode component materials - SILICON SILICON SILICON - SILICON
JESD-30 code - O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 - O-CEDB-N2
Phase - 1 1 1 - 1
Number of terminals - 2 2 2 - 2
Minimum operating temperature - -40 °C -40 °C -40 °C - -40 °C
Package body material - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED
Package shape - ROUND ROUND ROUND - ROUND
Package form - DISK BUTTON DISK BUTTON DISK BUTTON - DISK BUTTON
Maximum reverse current - 20000 µA 20000 µA 20000 µA - 20000 µA
surface mount - YES YES YES - YES
Terminal form - NO LEAD NO LEAD NO LEAD - NO LEAD
Terminal location - END END END - END
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