TetraFET
D2003UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
B
H
C
2 3
1
A
D
E
5 4
F
G
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
J
K
I
N
M
O
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DQ
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
GATE 1
DRAIN 1
GATE 2
DIM
mm
A
16.38
B
1.52
C
45°
D
6.35
E
3.30
F
14.22
G 1.27 x 45°
H
1.52
I
6.35
J
0.13
K
2.16
M
1.52
N
5.08
O
18.90
Tol.
0.26
0.13
5°
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.13
0.13
MAX
0.13
Inches
0.645
0.060
45°
0.250
0.130
0.560
0.05 x 45°
0.060
0.250
0.005
0.085
0.060
0.200
0.744
Tol.
0.010
0.005
5°
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.005
0.005
MAX
0.005
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
•
VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
35W
65V
±20V
1A
–65 to 150°C
200°C
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
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E-mail:
sales@semelab.co.uk
Document Number 3416
Issue 2
D2003UK
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η
VSWR
C
iss
C
oss
C
rss
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
V
GS
= 0
V
DS
= 28V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 5W
V
DS
= 28V
f = 1GHz
I
DQ
= 0.2A
I
D
= 10mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 1A
1
0.18
13
40
20:1
65
Typ.
Max. Unit
V
1
1
7
mA
μA
V
S
dB
%
—
12
6
0.5
pF
pF
pF
TOTAL DEVICE
PER SIDE
V
DS
= 28V
V
DS
= 28V
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
Reverse Transfer Capacitance V
DS
= 28V
* Pulse Test:
Pulse Duration = 300
μs
, Duty Cycle
≤
2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 5.0°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
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E-mail:
sales@semelab.co.uk
Document Number 3416
Issue 2
D2003UK
20
70
60
15
Efficiency
%
50
40
30
20
10
0
Gain
10
dB
5
0
Vds = 28V
Idq = 0.2A
f =1000MHz
0
2.5
Vds = 28V
Idq = 0.2A
f =1GHz
5
7.5
Gain
10
Vds = 28V
Idq = 0.2A
f = 1GHz
0
2
4
Pout W
Pout W
6
8
10
Drain Efficiency
Figure 1 Output Power and Gain vs. Input power
,0'
G%F
Figure 2 Output Power and Efficiency vs. Input Power
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
1000MHZ
I 0+]
I 0+]
9GV 9
3RXW:3(3
,GT $
,GT $
ZS
Ω
1.1 - j2.5
ZL
Ω
5.1 - j17.1
Figure 3 IMD Vs. Output Power.
Typical S Parameters
! Vds=28V, Idq=0.1A
# MHZ S MA R 50
!Freq
!MHz
70
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
mag
0.97
0.94
0.88
0.84
0.82
0.79
0.78
0.77
0.77
0.77
0.78
0.78
0.78
0.79
0.79
0.78
0.78
0.79
0.78
0.79
ang
-36.4
-48.0
-65.3
-78.5
-88.4
-97.1
-105.5
-113.3
-121.8
-128.9
-136.7
-144.0
-150.8
-156.7
-160.9
-164.2
-166.3
-168.5
-170.3
-172.5
S21
mag
15.8
14.1
12.3
10.2
8.8
7.7
6.9
6.0
5.4
4.9
4.6
4.4
4.0
3.7
3.4
3.0
2.7
2.6
2.5
2.4
ang
156.6
146.3
129.9
114.7
106.0
98.3
88.5
84.5
77.8
75.3
68.3
65.4
57.2
52.3
46.7
41.4
39.5
38.4
36.8
33.0
S12
mag
0.017
0.021
0.027
0.029
0.029
0.029
0.028
0.026
0.024
0.022
0.020
0.020
0.020
0.022
0.025
0.028
0.032
0.036
0.044
0.053
ang
67.2
58.1
45.5
34.8
28.1
27.3
22.2
24.2
23.3
29.6
35.0
46.6
57.6
68.5
76.6
81.6
87.8
92.3
97.4
97.4
S22
mag
0.91
0.88
0.81
0.77
0.75
0.73
0.72
0.71
0.70
0.70
0.70
0.70
0.70
0.71
0.70
0.69
0.68
0.68
0.70
0.70
ang
-23.2
-30.1
-40.3
-48.1
-54.2
-59.1
-64.3
-69.3
-75.2
-80.4
-86.5
-93.6
-99.6
-105.8
-111.3
-115.6
-117.0
-119.3
-121.0
-124.2
Document Number 3416
Issue 2
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
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E-mail:
sales@semelab.co.uk
D2003UK
1.4
1.2
VGS=13V
VGS=12V
VGS=11V
Drain Current (Amps)
1.0
0.8
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
0.6
0.4
VGS=5V
0.2
0.0
0
5
10
15
20
25
30
35
Drain Voltage (Volts)
Figure 4 – Typical IV Characteristics.
100
Capacitance pF
10
Output capacitance
Input Capacitance
1
Reverse transfer capacitance
0.1
0
10
V
ds
V
20
30
Figure 5 – Typical CV Characteristics.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
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E-mail:
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Document Number 3416
Issue 2
D2003UK
1 0
G a te - B ia s
1 K 2
1 0 0 n F
1 n F
1 K 2
1 K 2
L 1
T 1 1
3 0 p F
T 3
T 4
T 5
T 6
D 2 0 0 3 U K
L 2
T 1 2
T 1 3
+ 2 8 V
L 3
6 .8 K
1 0 n F
1 0 0 u F
T 2
T 1
1 -1 0 p F
3 0 p F
3 .6 p F
9 .1 p F
1 -1 0 p F
T 1 7
1 -1 0 p F
3 .6 p F
3 0 p F
3 0 p F
T 7
T 8
T 9
T 1 0
D 2 0 0 3 U K
T 1 4
T 1 5
T 1 6
1000MHz TEST FIXTURE
Substrate 0.8mm thick PTFE/glass
All microstrip lines W = 2.7mm
T1
T2, T17
T3, T7
T4, T8
T5, T9
T6, T10
T11,T14
T12,T15
T13,T16
L1, L2
L3
15.7
45mm 50 OHM UT 34 semi-rigid coax
7mm
15mm
7.6mm
8mm
8mm
11.2mm
7mm
6 turns 24swg enamelled copper wire, 3mm i.d.
1.5 turn 24swg enamelled copper wire on Siemens B62152-A7X
2 hole core
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Number 3416
Issue 2
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