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DMC904F10R

Description
RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Very High Frequency Band, Silicon, NPN, HALOGEN FREE, SSMINI6-F3-B, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size636KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

DMC904F10R Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Very High Frequency Band, Silicon, NPN, HALOGEN FREE, SSMINI6-F3-B, 6 PIN

DMC904F10R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage20 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)25
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.125 W
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)800 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DMC904F1
Silicon NPN epitaxial planar type
For high frequency amplification
Features
Package
Code
SSMini6-F3-B
Package dimension clicks here.→
Click!
High forward current transfer ratio h
FE
with excellent linearity
High transition frequency f
T
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Basic Part Number
DSC2G03 + DSC2001 (Individual)
Packaging
DMC904F10R Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
Name
Pin
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
Marking Symbol: D4
Internal Connection
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Tr1
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr2
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
30
20
3
50
60
50
7
100
200
125
150
–55 to +150
Unit
V
V
V
mA
V
V
V
mA
mA
mW
°C
°C
(C1)
6
(B2)
5
(E2)
4
Tr1
Tr2
1
(E1)
2
(B1)
3
(C2)
Publication date: January 2012
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