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DRC4523Y

Description
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, NS-B1-B, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size507KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DRC4523Y Overview

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, NS-B1-B, 3 PIN

DRC4523Y Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBULIT-IN BIAS RESISTOR RATIO IS 4.55
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)60
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Tentative
DRC4523Y
Silicon NPN epitaxial planar type
For digital circuits
Marking Symbol : TH
Package Code : NS-B1-B
Absolute Maximum Ratings Ta = 25 °C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
DRC4523Y
Total pages
page
Internal Connection
Rating
50
50
500
300
150
-55 to +150
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Unit
V
V
mA
mW
°C
°C
R1
B
R2
C
E
Resistance
value
Pin name
R1 2.2
R2
10
1. Emitter
2. Collector
3. Base
Electrical Characteristics Ta = 25 °C±3 °C
Parameter
Symbol
Conditions
IC = 10
μA,
IE = 0
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
VCE = 10 V, IC = 100 mA
IC = 100 mA, IB = 5 mA
VCE = 0.2 V, IC = 50 mA
VCE = 5 V, IC = 100
μA
Min
50
50
Typ
Max
1
1
1
Unit
V
V
μA
μA
mA
-
V
V
V
-
Collector-base voltage (Emitter open)
VCBO
Collector-emitter voltage (Base open)
VCEO
Collector-base cutoff current (Emitter open)
ICBO
Collector-emitter cutoff current (Base open)
ICEO
Emitter-base cutoff current (Collector open)
IEBO
Forward current transfer ratio
hFE
Collector-emitter saturation voltage
VCE(sat)
Vi(on)
Input voltage
Vi(off)
Input resistance
R1
Resistance ratio
R1/R2
60
0.25
1.9
0.4
-30% 2.2 +30%
0.17 0.22 0.27
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring
methods for transistors.
Packing
Radial type : 5000pcs / 1carton
2010.2.23
Prepared
Revised
Semiconductor Company, Panasonic Corporation

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