PESD5V0V1BA; PESD5V0V1BB;
PESD5V0V1BL
Very low capacitance bidirectional ESD protection diodes
Rev. 01 — 28 July 2009
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
Table 1.
Product overview
Package
NXP
PESD5V0V1BA
PESD5V0V1BB
PESD5V0V1BL
SOD323
SOD523
SOD882
JEITA
SC-76
SC-79
-
very small
ultra small and flat lead
leadless ultra small
Package configuration
Type number
1.2 Features
I
I
I
I
I
Bidirectional ESD protection of one line
Very low diode capacitance: C
d
= 11 pF
Max. peak pulse power: P
PP
= 45 W
Low clamping voltage: V
CL
= 12.5 V
Ultra low leakage current: I
RM
< 1 nA
I
I
I
I
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 4.8 A
AEC-Q101 qualified
1.3 Applications
I
I
I
I
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Subscriber Identity Module (SIM) card
protection
I
I
I
I
Communication systems
Portable electronics
10/100 Mbit/s Ethernet
FireWire
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
C
d
Parameter
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
Conditions
Min
-
-
Typ
-
11
Max
5
13
Unit
V
pF
NXP Semiconductors
PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode (diode 1)
cathode (diode 2)
[1]
Simplified outline
Graphic symbol
PESD5V0V1BA; PESD5V0V1BB
1
001aab540
2
1
sym045
2
PESD5V0V1BL
1
2
cathode (diode 1)
cathode (diode 2)
[1]
1
2
1
sym045
2
Transparent
top view
[1]
The marking bar indicates pin 1.
3. Ordering information
Table 4.
Ordering information
Package
Name
PESD5V0V1BA
PESD5V0V1BB
PESD5V0V1BL
SC-76
SC-79
-
Description
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 2 leads
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.5 mm
Version
SOD323
SOD523
SOD882
Type number
4. Marking
Table 5.
Marking codes
Marking code
1K
Z9
X1
Type number
PESD5V0V1BA
PESD5V0V1BB
PESD5V0V1BL
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
I
PP
PESD5V0V1BA_BB_BL_1
Parameter
peak pulse power
peak pulse current
Conditions
t
p
= 8/20
µs
t
p
= 8/20
µs
[1]
[1]
Min
-
-
Max
45
4.8
Unit
W
A
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2009
2 of 13
NXP Semiconductors
PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
T
j
T
amb
T
stg
[1]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−55
−65
Max
150
+150
+150
Unit
°C
°C
°C
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Table 7.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883 (human
body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[1]
Min
-
-
-
Max
30
2
16
Unit
kV
kV
kV
Table 8.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD5V0V1BA_BB_BL_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2009
3 of 13
NXP Semiconductors
PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
6. Characteristics
Table 9.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
I
RM
V
BR
C
d
V
CL
r
dif
[1]
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
Conditions
V
RWM
= 5 V
I
R
= 5 mA
f = 1 MHz;
V
R
= 0 V
I
PP
= 4.8 A
I
R
= 5 mA
[1]
Min
-
-
5.8
-
-
-
Typ
-
<1
6.8
11
-
-
Max
5
10
7.8
13
12.5
35
Unit
V
nA
V
pF
V
Ω
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
10
3
P
PP
(W)
10
2
006aab606
1.2
P
PP
P
PP(25°C)
0.8
001aaa193
10
0.4
1
1
10
10
2
t
p
(µs)
10
3
0
0
50
100
150
T
j
(°C)
200
T
amb
= 25
°C
Fig 3.
Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
PESD5V0V1BA_BB_BL_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2009
4 of 13
NXP Semiconductors
PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
12
C
d
(pF)
10
006aab607
10
3
I
RM
I
RM(25°C)
10
2
006aab608
10
1
8
10
−1
6
0
1
2
3
4
V
R
(V)
5
10
−2
−100
−50
0
50
100
T
j
(°C)
150
f = 1 MHz; T
amb
= 25
°C
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
I
PP
−V
CL
−V
BR
−V
RWM
I
R
I
RM
−I
RM
−I
R
V
RWM
V
BR
V
CL
−
+
−I
PP
006aaa676
Fig 7.
V-I characteristics for a bidirectional ESD protection diode
PESD5V0V1BA_BB_BL_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2009
5 of 13
京公网安备 11010802033920号
EEWORLD
