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IDT71V25761SA183BG8

Description
Cache SRAM, 128KX36, 3.3ns, CMOS, PBGA119, BGA-119
Categorystorage    storage   
File Size510KB,23 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

IDT71V25761SA183BG8 Overview

Cache SRAM, 128KX36, 3.3ns, CMOS, PBGA119, BGA-119

IDT71V25761SA183BG8 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeBGA
package instructionBGA-119
Contacts119
Reach Compliance Codenot_compliant
ECCN code3A991.B.2.A
Maximum access time3.3 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)183 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
JESD-609 codee0
length22 mm
memory density4718592 bit
Memory IC TypeCACHE SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals119
word count131072 words
character code128000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
power supply2.5,3.3 V
Certification statusNot Qualified
Maximum seat height2.36 mm
Maximum standby current0.03 A
Minimum standby current3.14 V
Maximum slew rate0.34 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn63Pb37)
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
width14 mm
Base Number Matches1
128K X 36, 256K X 18
3.3V Synchronous SRAMs
2.5V I/O, Pipelined Outputs,
Burst Counter, Single Cycle Deselect
x
x
IDT71V25761
IDT71V25781
Features
128K x 36, 256K x 18 memory configurations
Supports high system speed:
Commercial:
– 200MHz 3.1ns clock access time
Commercial and Industrial:
– 183MHz 3.3ns clock access time
– 166MHz 3.5ns clock access time
LBO
input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW), byte write
enable (BWE), and byte writes (BWx)
3.3V core power supply
Power down controlled by ZZ input
2.5V I/O
Packaged in a JEDEC Standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball
grid array
Description
The IDT71V25761/781 are high-speed SRAMs organized as 128K
x 36/256K x 18. The IDT71V25761/781 SRAMs contain write, data,
address and control registers. Internal logic allows the SRAM to generate
a self-timed write based upon a decision which can be left until the end of
the write cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71V25761/718 can provide four cycles of data
for a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will be pipelined for one
cycle before it is available on the next rising clock edge. If burst mode
operation is selected (ADV=LOW), the subsequent three cycles of output
data will be available to the user on the next three rising clock edges. The
order of these three addresses are defined by the internal burst counter
and the
LBO
input pin.
The IDT71V25761/781 SRAMs utilize IDT’s latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and 165 fine pitch ball grid array (fBGA).
x
x
x
x
x
x
Pin Description Summary
A
0
-A
17
CE
CS
0
,
CS
1
OE
GW
BWE
BW
1
,
BW
2
,
BW
3
,
BW
4
(1)
CLK
ADV
ADSC
ADSP
LBO
ZZ
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
Address Inputs
Chip Enable
Chip Selects
Output Enable
Global Write Enable
Byte Write Enable
Individual Byte Write Selects
Clock
Burst Address Advance
Address Status (Cache Controller)
Address Status (Processor)
Linear / Interleaved Burst Order
Sleep Mode
Data Input / Output
Core Power, I/O Power
Ground
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
I/O
Supply
Supply
Synchronous
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Synchronous
Synchronous
DC
Asynchronous
Synchronous
N/A
N/A
5297 tbl 01
NOTE:
1.
BW
3
and
BW
4
are not applicable for the IDT71V25781.
OCTOBER 2000
1
©2000 Integrated Device Technology, Inc.
DSC-5297/01
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