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BSM75GD170DL

Description
Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, MODULE-19
CategoryDiscrete semiconductor    The transistor   
File Size225KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BSM75GD170DL Overview

Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, MODULE-19

BSM75GD170DL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionMODULE-19
Reach Compliance Codecompliant
Shell connectionISOLATED
Maximum collector current (IC)150 A
Collector-emitter maximum voltage1700 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X19
Number of components6
Number of terminals19
Maximum operating temperature125 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)625 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)930 ns
Nominal on time (ton)200 ns
VCEsat-Max3.3 V
Base Number Matches1
European Power-
Semiconductor and
Electronics Company
Marketing Information
BSM 75 GD 170 DL
118.11
94.5
119
121.5
99.9
4 x 19.05 = 76.2
19.05
19
3.81
18
17
16
15
1
2 3
4
5 6
7
8 9
10 11 12
3.81
15.24
1.15x1.0
5 x 15.24 =76.2
110
connections to be made externally
21
1
2
13
5
6
9
10
19
17
15
3
4
20
7
8
11
12
14
01.07.1998

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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