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SDR9510NDB

Description
50 A, 1000 V, SILICON, RECTIFIER DIODE, TO-258AA
CategoryDiscrete semiconductor    diode   
File Size97KB,3 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SDR9510NDB Overview

50 A, 1000 V, SILICON, RECTIFIER DIODE, TO-258AA

SDR9510NDB Parametric

Parameter NameAttribute value
Parts packaging codeTO-258AA
package instructionR-XSFM-P3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
applicationULTRA FAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-258AA
JESD-30 codeR-XSFM-P3
Maximum non-repetitive peak forward current500 A
Number of components1
Phase1
Number of terminals3
Maximum output current50 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Base Number Matches1
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR958 thru SDR9512
Series
50 AMP
800 -1200 Volts
100 nsec
Ultrafast Recovery
Rectifier
Features:
Ultra Fast Recovery: 80 nsec typical
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Package
Faster Recovery Times Available – Contact Factory
TX, TXV, Space Level Screening Available - Consult
Factory
DESIGNER’S DATA SHEET
Part Number/Ordering Information
1/
SDR __ __ __ __
Screening
2/
___
TX
TXV
S
= Not Screened
= TX Level
= TXV Level
= S Level
Lead Options
__= Straight Leads
DB = Bent Down
UB = Bent Up
Package
N = TO-258
P = TO-259
S2 = SMD2
958 = 800V
959 = 900V
9510 = 1000V
9511 = 1100V
9512 = 1200V
Family/Voltage
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SDR958
SDR959
SDR9510
SDR9511
SDR9512
Symbol
V
RRM
V
RWM
V
R
Io
I
FSM
Top & Tstg
N&P
SMD2
TO-258
Value
800
900
1000
1100
1200
50
500
-65 to +200
0.45
0.3
Units
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25ºC)
3/
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow
Junction to Reach Equilibrium Between Pulses, T
A
= 25ºC)
3/
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
3/
Notes:
1/ For Ordering Information, Price, Operating
Curves, and Availability - Contact Factory
2/ Screening per MIL-PRF-19500
3/ Pins 2&3 connected
Amps
Amps
ºC
ºC/W
SMD2
R
θJC
TO-259
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0113C
DOC

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