ZVN2535A
ZVN2535A
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
TYPICAL CHARACTERISTICS
800
V
GS
=
10V
4V
500
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt V
DS
R
DS(on)
=35Ω
700
V
GS
=
10V
6V
450
600
400
350
500
D
G
300
S
400
4V
250
300
3V
200
E-Line
TO92 Compatible
200
150
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
SYMBOL
VALUE
350
90
1
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
I
D(On)
Drain Current (mA)
I
D(On)
Drain Current (mA)
100
3V
100
50
0
5
10
15
20
25
0
0
0
10
20
30
40
50
60
70
80
90
100
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
20
400
18
V
DS=
10V
16
300
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
350
1
3
20
10
400
I
D(on)
Static Drain-Source On-State
Resistance (1)
R
DS(on)
Forward Transconductance (1)( g
fs
2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
C
iss
C
oss
C
rss
t
d(on)
100
70
10
4
7
250
35
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
mA
Ω
mS
pF
pF
pF
ns
V
DS
=25 V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
14
12
10
200
8
I
D=
250mA
6
100
2
1
2
3
4
5
6
7
8
9
10
100mA
50mA
I
D(On)
Drain Current (mA)
4
V
DS-
Drain Source
Voltage (Volts)
0
0
1
2
3
4
5
6
7
8
9
10
0
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Zero Gate Voltage
Drain Current
On-State Drain Current(1)
V
DS
=350V, V
GS
=0
V
DS
=280V, V
GS
=0V,
T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V,I
D
=100mA
V
DS
=25V,I
D
=100mA
Voltage Saturation Characteristics
Transfer Characteristics
125
250
100
200
75
150
50
C
iss
100
C-Capacitance (pF)
25
50
g
fs
-Transconductance (mS)
C
oss
C
rss
0
100
200
300
0
400
500
0
10
20
30
40
50
Rise Time (2)(3)
I
D
- Drain Current (mA)
t
r
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t
d(off)
t
f
7
16
10
ns
ns
ns
V
DS
-Drain Source Voltage (Volts)
V
DD
≈25V,
I
D
=100mA
Capacitance v drain-source voltage
Transconductance v drain current
3-373
3-372
Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(
1
)
ZVN2535A
ZVN2535A
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
TYPICAL CHARACTERISTICS
800
V
GS
=
10V
4V
500
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt V
DS
R
DS(on)
=35Ω
700
V
GS
=
10V
6V
450
600
400
350
500
D
G
300
S
400
4V
250
300
3V
200
E-Line
TO92 Compatible
200
150
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
SYMBOL
VALUE
350
90
1
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
I
D(On)
Drain Current (mA)
I
D(On)
Drain Current (mA)
100
3V
100
50
0
5
10
15
20
25
0
0
0
10
20
30
40
50
60
70
80
90
100
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
20
400
18
V
DS=
10V
16
300
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
350
1
3
20
10
400
I
D(on)
Static Drain-Source On-State
Resistance (1)
R
DS(on)
Forward Transconductance (1)( g
fs
2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
C
iss
C
oss
C
rss
t
d(on)
100
70
10
4
7
250
35
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
mA
Ω
mS
pF
pF
pF
ns
V
DS
=25 V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
14
12
10
200
8
I
D=
250mA
6
100
2
1
2
3
4
5
6
7
8
9
10
100mA
50mA
I
D(On)
Drain Current (mA)
4
V
DS-
Drain Source
Voltage (Volts)
0
0
1
2
3
4
5
6
7
8
9
10
0
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Zero Gate Voltage
Drain Current
On-State Drain Current(1)
V
DS
=350V, V
GS
=0
V
DS
=280V, V
GS
=0V,
T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V,I
D
=100mA
V
DS
=25V,I
D
=100mA
Voltage Saturation Characteristics
Transfer Characteristics
125
250
100
200
75
150
50
C
iss
100
C-Capacitance (pF)
25
50
g
fs
-Transconductance (mS)
C
oss
C
rss
0
100
200
300
0
400
500
0
10
20
30
40
50
Rise Time (2)(3)
I
D
- Drain Current (mA)
t
r
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t
d(off)
t
f
7
16
10
ns
ns
ns
V
DS
-Drain Source Voltage (Volts)
V
DD
≈25V,
I
D
=100mA
Capacitance v drain-source voltage
Transconductance v drain current
3-373
3-372
Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(
1
)
ZVN2535A
TYPICAL CHARACTERISTICS
V
DS
=
100V
200V
I
D=
300mA
350V
250
16
14
200
12
150
10
8
100
6
50
4
2
g
fs
-Forward Transconductance (mS)
V
GS
-Gate Source Voltage (Volts)
0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
10
0
V
GS
-Gate Source Voltage (Volts)
Q-Charge (nC)
Transconductance v gate-source voltage
Gate charge v gate-source voltage
V
GS
=3V
)
on
S(
4V
10V
2.4
2.2
2.0
R
D
V
GS=
10V
I
D=
100mA
100
90
80
70
60
50
1.8
40
1.6
Re
ce
an
st
si
1.4
30
1.2
20
S(th)
1.0
ce
ur
So
n-
ai
Dr
0.8
0.6
V
GS=
V
DS
I
D=
1mA
Gate T
hresho
ld Volt
age V
G
Normalised R
DS(on)
and V
GS(th)
10
RDS(on)-Drain Source On Resistance
(Ω)
10
100
1000
0.4
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
I
D-
Drain Current
(mA)
T-Temperature (C°)
On-resistance v drain current
Normalised R
DS(on)
and V
GS(th)
vs Temperature
3-374
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