BTA208M800E datasheet, PDF - EEWORLD Datasheet

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BTA208M800E: DescriptionTRIAC, 800V V(DRM), 8A I(T)RMS; CategoryAnalog mixed-signal IC Trigger device; File Size173KB，3 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BTA208M800E Overview

TRIAC, 800V V(DRM), 8A I(T)RMS

BTA208M800E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknown
Critical rise rate of minimum off-state voltage	20 V/us
Maximum DC gate trigger current	10 mA
Maximum DC gate trigger voltage	1.5 V
Maximum holding current	12 mA
JESD-609 code	e0
Maximum leakage current	0.5 mA
Maximum on-state voltage	1.65 V
Maximum operating temperature	125 °C
Maximum rms on-state current	8 A
Off-state repetitive peak voltage	800 V
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Trigger device type	TRIAC

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BTA208M800E Related Products

	BTA208M800E	BTA208M500F	BTA208S500F	BTA208M600F	BTA208M800F	BTA208M500E	BTA208S500D	BTA208M600D	BTA208S500E	BTA208M600E
Description	TRIAC, 800V V(DRM), 8A I(T)RMS	TRIAC, 500V V(DRM), 8A I(T)RMS	TRIAC, 500V V(DRM), 8A I(T)RMS	TRIAC, 600V V(DRM), 8A I(T)RMS	TRIAC, 800V V(DRM), 8A I(T)RMS	TRIAC, 500V V(DRM), 8A I(T)RMS	TRIAC, 500V V(DRM), 8A I(T)RMS	TRIAC, 600V V(DRM), 8A I(T)RMS	TRIAC, 500V V(DRM), 8A I(T)RMS	TRIAC, 600V V(DRM), 8A I(T)RMS
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Critical rise rate of minimum off-state voltage	20 V/us	50 V/us	50 V/us	50 V/us	50 V/us	20 V/us	10 V/us	10 V/us	20 V/us	20 V/us
Maximum DC gate trigger current	10 mA	25 mA	25 mA	25 mA	25 mA	10 mA	5 mA	5 mA	10 mA	10 mA
Maximum DC gate trigger voltage	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
Maximum holding current	12 mA	30 mA	30 mA	30 mA	30 mA	12 mA	6 mA	6 mA	12 mA	12 mA
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
Maximum leakage current	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA
Maximum on-state voltage	1.65 V	1.65 V	1.65 V	1.65 V	1.65 V	1.65 V	1.65 V	1.65 V	1.65 V	1.65 V
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Maximum rms on-state current	8 A	8 A	8 A	8 A	8 A	8 A	8 A	8 A	8 A	8 A
Off-state repetitive peak voltage	800 V	500 V	500 V	600 V	800 V	500 V	500 V	600 V	500 V	600 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Trigger device type	TRIAC	TRIAC	TRIAC	TRIAC	TRIAC	TRIAC	TRIAC	TRIAC	TRIAC	TRIAC

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