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YG225D2

Description
10 A, 200 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size55KB,3 Pages
ManufacturerETC
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YG225D2 Overview

10 A, 200 V, SILICON, RECTIFIER DIODE

YG225C2,N2,D2
(10A)
FAST RECOVERY DIODE
10
±0.5
ø3.2
+0.2
-0.1
(200V / 10A)
Outline drawings, mm
4.5
±0.2
2.7
±0.2
6.3
2.7
±0.2
3.7
±0.2
1.2
±0.2
13
Min
15
±0.3
Features
Insulated package by fully molding
High voltage by mesa design
High reliability
JEDEC
EIAJ
0.7
±0.2
2.54
±0.2
0.6
-0
+0.2
2.7
±0.2
SC-67
Connection diagram
Applications
High speed switching
2
YG225N2
1
2
3
2
YG225C2
1
3
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Isolating voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
V
iso
I
O
I
FSM
T
j
T
stg
Conditions
YG225D2
1
3
Rating
200
250
Unit
V
V
V
A
A
°C
°C
Terminals-to-Case, AC.1min
Square wave, duty=1/2, Tc=95°C
Sine wave 10ms
1500
10*
70
+150
-40 to +150
*
Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop **
Reverse current
**
Symbol
V
FM
I
RRM
t
rr
R
th(j-c)
Conditions
I
FM
=2.5A
V
R
=V
RRM
I
F
=0.1A, I
R
=0.1A, Irec=0.01A
Junction to case
**
Rating per element
Max.
1.3
50
0.4
3.5*
Unit
V
µA
µs
°C/W
Reverse recovery time
Thermal resistance
Mechanical characteristics
Mounting torque
Approximate weight
Recommended torque
0.3 to 0.5
2.3
N·m
g

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YG225D2 YG225C2 YG225N2
Description 10 A, 200 V, SILICON, RECTIFIER DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE
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