BC556 THRU BC559
Small Signal Transistors (PNP)
TO-92
.181 (4.6)
min. .492 (12.5) .181 (4.6)
.142 (3.6)
♦
PNP Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
FEATURES
♦
These transistors are subdivided into
three groups A, B and C according to
their current gain. The type BC556 is avail-
able in groups A and B, however, the types
BC557 and BC558 can be supplied in all three
groups. The BC559 is a low-noise type available
in all three groups. As complementary types, the
NPN transistors BC546 … BC549 are recommended.
.098 (2.5)
max.
∅
.022 (0.55)
♦
On special request, these transistors are also manufac-
tured in the pin configuration TO-18.
E
C
B
MECHANICAL DATA
Case:
TO-92 Plastic Package
Weight:
approx. 0.18 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Collector-Base Voltage
BC556
BC557
BC558, BC559
BC556
BC557
BC558, BC559
BC556
BC557
BC558, BC559
–V
CBO
–V
CBO
–V
CBO
–V
CES
–V
CES
–V
CES
–V
CEO
–V
CEO
–V
CEO
–V
EBO
–I
C
–I
CM
–I
BM
I
EM
P
tot
T
j
T
S
Value
80
50
30
80
50
30
65
45
30
5
100
200
200
200
500
1)
150
–65 to +150
Unit
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mW
°C
°C
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
amb
= 25 °C
Junction Temperature
Storage Temperature Range
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
4/98
BC556 THRU BC559
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
h-Parameters
at –V
CE
= 5 V, –I
C
= 2 mA, f = 1 kHz
Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
DC Current Gain
at –V
CE
= 5 V, –I
C
= 10
µA
Current Gain Group A
B
C
at –V
CE
= 5 V, –I
C
= 2 mA
Current Gain Group A
B
C
at –V
CE
= 5 V, –I
C
= 100 mA
Current Gain Group A
B
C
Thermal Resistance Junction to Ambient Air
Collector Saturation Voltage
at –I
C
= 10 mA, –I
B
= 0.5 mA
at –I
C
= 100 mA, –I
B
= 5 mA
Base Saturation Voltage
at –I
C
= 10 mA, –I
B
= 0.5 mA
at –I
C
= 100 mA, –I
B
= 5 mA
Base-Emitter Voltage
at –V
CE
= 5 V, –I
C
= 2 mA
at –V
CE
= 5 V, –I
C
= 10 mA
Collector-Emitter Cutoff Current
BC556
at –V
CE
= 80 V
at –V
CE
= 50 V
BC557
BC558
at –V
CE
= 30 V
BC556
at –V
CE
= 80 V, T
j
= 125 °C
at –V
CE
= 50 V, T
j
= 125 °C
BC557
BC558, BC559
at –V
CE
= 30 V, T
j
= 125 °C
1)
Min.
Typ.
Max.
Unit
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
–
–
–
1.6
3.2
6
–
–
–
–
–
–
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10
–4
2 · 10
–4
3 · 10
–4
–
–
–
4.5
8.5
15
30
60
110
–
–
–
–
–
–
kΩ
kΩ
kΩ
µS
µS
µS
–
–
–
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
R
thJA
–V
CEsat
–V
CEsat
–V
BEsat
–V
BEsat
–V
BE
–V
BE
–I
CES
–I
CES
–I
CES
–I
CES
–I
CES
–I
CES
–
–
–
110
200
420
–
–
–
–
–
–
–
–
600
–
–
–
–
–
–
–
90
150
270
180
290
500
120
200
400
–
80
250
700
900
660
–
0.2
0.2
0.2
–
–
–
–
–
–
220
450
800
–
–
–
250
1)
300
650
–
–
750
800
15
15
15
4
4
4
–
–
–
–
–
–
–
–
–
K/W
mV
mV
mV
mV
mV
mV
nA
nA
nA
µA
µA
µA
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
BC556 THRU BC559
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Gain-Bandwidth Product
at –V
CE
= 5 V, –I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance
at –V
CB
= 10V, f = 1 MHz
Noise Figure
at –V
CE
= 5 V, –I
C
= 200
µA,
R
G
= 2 kΩ,
f = 1 kHz,
∆f
= 200 Hz
BC556, BC557, BC558
BC559
Noise Figure
at –V
CE
= 5 V, –I
C
= 200
µA,
R
G
= 2 kΩ,
f = 30…15000 Hz
BC559
f
T
C
CBO
Min.
–
–
Typ.
150
–
Max.
–
6
Unit
MHz
pF
F
F
–
–
2
1
10
4
dB
dB
F
–
1.2
4
dB
RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559
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